Twistronics: Manipulating the electronic properties of two-dimensional layered structures through their twist angle

Stephen Carr, Daniel Massatt, Shiang Fang, Paul Cazeaux, Mitchell Luskin, Efthimios Kaxiras

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188 Scopus citations

Abstract

The ability in experiments to control the relative twist angle between successive layers in two-dimensional (2D) materials offers an approach to manipulating their electronic properties; we refer to this approach as "twistronics." A major challenge to theory is that, for arbitrary twist angles, the resulting structure involves incommensurate (aperiodic) 2D lattices. Here, we present a general method for the calculation of the electronic density of states of aperiodic 2D layered materials, using parameter-free Hamiltonians derived from ab initio density-functional theory. We use graphene, a semimetal, and MoS2, a representative of the transition-metal dichalcogenide family of 2D semiconductors, to illustrate the application of our method, which enables fast and efficient simulation of multilayered stacks in the presence of local disorder and external fields. We comment on the interesting features of their density of states as a function of twist angle and local configuration and on how these features can be experimentally observed.

Original languageEnglish (US)
Article number075420
JournalPhysical Review B
Volume95
Issue number7
DOIs
StatePublished - Feb 17 2017

Bibliographical note

Publisher Copyright:
© 2017 American Physical Society.

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