Tuning the 2D superconductor-insulator transition by use of the electric field effect

Kevin A. Parendo; K. H. Sarwa; B. Tan; A. Bhattacharya; M. Eblen-Zayas; N. Staley; A. M. Goldman

doi:10.1063/1.2355018

Tuning the 2D superconductor-insulator transition by use of the electric field effect

Kevin A. Parendo, K. H. Sarwa, B. Tan, A. Bhattacharya, M. Eblen-Zayas, N. Staley, A. M. Goldman

Physics and Astronomy (Twin Cities)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

Some investigations of the superconductor-insulator (SI) transitions in two dimensions have been hindered by aspects of the intrinsic disorder of the studied systems. As a solution to this problem, we have induced superconductivity in insulating, ultrathin films of amorphous bismuth by utilization of the electric field effect. This method of tuning the SI transition does not alter the intrinsic disorder. Analysis of the response to transferred charge density has revealed that screening and the density of states are both involved. This SI transition has been analyzed as a quantum phase transition using a finite size scaling analysis with electron concentration as a tuning parameter, yielding a critical exponent product vz = 0.7 ± 0.05. If z = 1 as expected, this product is consistent with the universality classes of the (2D+1) XY model and the 2D Boson Hubbard model in the absence of disorder.

Original language	English (US)
Title of host publication	LOW TEMPERATURE PHYSICS
Subtitle of host publication	24th International Conference on Low Temperature Physics - LT24
Pages	949-950
Number of pages	2
DOIs	https://doi.org/10.1063/1.2355018
State	Published - 2006
Event	LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24 - Orlando, FL, United States Duration: Aug 10 2006 → Oct 17 2006

Publication series

Name	AIP Conference Proceedings
Volume	850
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Other

Other	LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24
Country/Territory	United States
City	Orlando, FL
Period	8/10/06 → 10/17/06

Keywords

2D
Electrostatic
FET
SIT
Superconductivity

Publisher link

10.1063/1.2355018

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Cite this

Parendo, K. A., Sarwa, K. H., Tan, B., Bhattacharya, A., Eblen-Zayas, M., Staley, N., & Goldman, A. M. (2006). Tuning the 2D superconductor-insulator transition by use of the electric field effect. In LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24 (pp. 949-950). (AIP Conference Proceedings; Vol. 850). https://doi.org/10.1063/1.2355018

Tuning the 2D superconductor-insulator transition by use of the electric field effect. / Parendo, Kevin A.; Sarwa, K. H.; Tan, B. et al.
LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24. 2006. p. 949-950 (AIP Conference Proceedings; Vol. 850).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Parendo, KA, Sarwa, KH, Tan, B, Bhattacharya, A, Eblen-Zayas, M, Staley, N & Goldman, AM 2006, Tuning the 2D superconductor-insulator transition by use of the electric field effect. in LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24. AIP Conference Proceedings, vol. 850, pp. 949-950, LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24, Orlando, FL, United States, 8/10/06. https://doi.org/10.1063/1.2355018

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abstract = "Some investigations of the superconductor-insulator (SI) transitions in two dimensions have been hindered by aspects of the intrinsic disorder of the studied systems. As a solution to this problem, we have induced superconductivity in insulating, ultrathin films of amorphous bismuth by utilization of the electric field effect. This method of tuning the SI transition does not alter the intrinsic disorder. Analysis of the response to transferred charge density has revealed that screening and the density of states are both involved. This SI transition has been analyzed as a quantum phase transition using a finite size scaling analysis with electron concentration as a tuning parameter, yielding a critical exponent product vz = 0.7 ± 0.05. If z = 1 as expected, this product is consistent with the universality classes of the (2D+1) XY model and the 2D Boson Hubbard model in the absence of disorder.",

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AB - Some investigations of the superconductor-insulator (SI) transitions in two dimensions have been hindered by aspects of the intrinsic disorder of the studied systems. As a solution to this problem, we have induced superconductivity in insulating, ultrathin films of amorphous bismuth by utilization of the electric field effect. This method of tuning the SI transition does not alter the intrinsic disorder. Analysis of the response to transferred charge density has revealed that screening and the density of states are both involved. This SI transition has been analyzed as a quantum phase transition using a finite size scaling analysis with electron concentration as a tuning parameter, yielding a critical exponent product vz = 0.7 ± 0.05. If z = 1 as expected, this product is consistent with the universality classes of the (2D+1) XY model and the 2D Boson Hubbard model in the absence of disorder.

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Tuning the 2D superconductor-insulator transition by use of the electric field effect

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