Tuning the 2D superconductor-insulator transition by use of the electric field effect

Kevin A. Parendo, K. H. Sarwa, B. Tan, A. Bhattacharya, M. Eblen-Zayas, N. Staley, A. M. Goldman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Some investigations of the superconductor-insulator (SI) transitions in two dimensions have been hindered by aspects of the intrinsic disorder of the studied systems. As a solution to this problem, we have induced superconductivity in insulating, ultrathin films of amorphous bismuth by utilization of the electric field effect. This method of tuning the SI transition does not alter the intrinsic disorder. Analysis of the response to transferred charge density has revealed that screening and the density of states are both involved. This SI transition has been analyzed as a quantum phase transition using a finite size scaling analysis with electron concentration as a tuning parameter, yielding a critical exponent product vz = 0.7 ± 0.05. If z = 1 as expected, this product is consistent with the universality classes of the (2D+1) XY model and the 2D Boson Hubbard model in the absence of disorder.

Original languageEnglish (US)
Title of host publicationLOW TEMPERATURE PHYSICS
Subtitle of host publication24th International Conference on Low Temperature Physics - LT24
Pages949-950
Number of pages2
DOIs
StatePublished - Dec 1 2006
EventLOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24 - Orlando, FL, United States
Duration: Aug 10 2006Oct 17 2006

Publication series

NameAIP Conference Proceedings
Volume850
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherLOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24
CountryUnited States
CityOrlando, FL
Period8/10/0610/17/06

Keywords

  • 2D
  • Electrostatic
  • FET
  • SIT
  • Superconductivity

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