Tunable electroluminescence from GaAs doping superlattices

H. Künzel, G. H. Döhler, P. Ruden, K. Ploog

Research output: Contribution to journalArticle

29 Scopus citations

Abstract

The first observation of strongly tunable electroluminescence from a new type of semiconductor superlattice is reported. We achieved a shift of the electroluminescence peak energy by several hundred millielectron volts below the gap of pure GaAs, when electrons and holes are injected over long distances via selective electrodes. This directly reflects the tunability of the indirect gap in real space, which is a unique feature of doping superlattices. The results further demonstrate that with increasing doping concentration of the constituent superlattice layers the luminescence frequency can be tuned over an even wider range. This behavior agrees well with our calculations.

Original languageEnglish (US)
Pages (from-to)852-854
Number of pages3
JournalApplied Physics Letters
Volume41
Issue number9
DOIs
StatePublished - Dec 1 1982

Fingerprint Dive into the research topics of 'Tunable electroluminescence from GaAs doping superlattices'. Together they form a unique fingerprint.

  • Cite this

    Künzel, H., Döhler, G. H., Ruden, P., & Ploog, K. (1982). Tunable electroluminescence from GaAs doping superlattices. Applied Physics Letters, 41(9), 852-854. https://doi.org/10.1063/1.93717