Tunable Chirality-Dependent Nonlinear Electrical Responses in 2D Tellurium

Chang Niu, Gang Qiu, Yixiu Wang, Pukun Tan, Mingyi Wang, Jie Jian, Haiyan Wang, Wenzhuo Wu, Peide D. Ye

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Tellurium (Te) is an elemental semiconductor with a simple chiral crystal structure. Te in a two-dimensional (2D) form synthesized by a solution-based method shows excellent electrical, optical, and thermal properties. In this work, the chirality of hydrothermally grown 2D Te is identified and analyzed by hot sulfuric acid etching and high-angle tilted high-resolution scanning transmission electron microscopy. The gate-tunable nonlinear electrical responses, including the nonreciprocal electrical transport in the longitudinal direction and the nonlinear planar Hall effect in the transverse direction, are observed in 2D Te under a magnetic field. Moreover, the nonlinear electrical responses have opposite signs in left- and right-handed 2D Te due to the opposite spin polarizations ensured by the chiral symmetry. The fundamental relationship between the spin-orbit coupling and the crystal symmetry in two enantiomers provides a viable platform for realizing chirality-based electronic devices by introducing the degree of freedom of chirality into electron transport.

Original languageEnglish (US)
Pages (from-to)8445-8453
Number of pages9
JournalNano letters
Volume23
Issue number18
DOIs
StatePublished - Sep 27 2023
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2023 American Chemical Society.

Keywords

  • 2D tellurium
  • chirality
  • gate-tunability
  • nonlinear transport
  • spin texture

PubMed: MeSH publication types

  • Journal Article

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