Transport-to-quantum lifetime ratios in AlGaN/GaN heterostructures

L. Hsu, W. Walukiewicz

Research output: Contribution to journalArticlepeer-review

41 Scopus citations


We have calculated ratios of the transport-to-quantum lifetimes τtq of the two-dimensional electron gas in AlGaN/GaN heterostructures at low temperatures. In contrast to conventional interpretations, we show that large values of this ratio do not necessarily indicate that long-range scattering mechanisms such as Coulomb scattering are the dominant carrier scattering mechanisms and that large ratios (>20) can be obtained even when short-range scattering mechanisms are dominant.

Original languageEnglish (US)
Pages (from-to)2508-2510
Number of pages3
JournalApplied Physics Letters
Issue number14
StatePublished - Apr 8 2002


Dive into the research topics of 'Transport-to-quantum lifetime ratios in AlGaN/GaN heterostructures'. Together they form a unique fingerprint.

Cite this