Transport-to-quantum lifetime ratios in AlGaN/GaN heterostructures

L. Hsu; W. Walukiewicz

doi:10.1063/1.1468260

Transport-to-quantum lifetime ratios in AlGaN/GaN heterostructures

L. Hsu, W. Walukiewicz

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Abstract

We have calculated ratios of the transport-to-quantum lifetimes τ_t/τ_q of the two-dimensional electron gas in AlGaN/GaN heterostructures at low temperatures. In contrast to conventional interpretations, we show that large values of this ratio do not necessarily indicate that long-range scattering mechanisms such as Coulomb scattering are the dominant carrier scattering mechanisms and that large ratios (>20) can be obtained even when short-range scattering mechanisms are dominant.

Original language	English (US)
Pages (from-to)	2508-2510
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	14
DOIs	https://doi.org/10.1063/1.1468260
State	Published - Apr 8 2002

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10.1063/1.1468260

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abstract = "We have calculated ratios of the transport-to-quantum lifetimes τt/τq of the two-dimensional electron gas in AlGaN/GaN heterostructures at low temperatures. In contrast to conventional interpretations, we show that large values of this ratio do not necessarily indicate that long-range scattering mechanisms such as Coulomb scattering are the dominant carrier scattering mechanisms and that large ratios (>20) can be obtained even when short-range scattering mechanisms are dominant.",

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Transport-to-quantum lifetime ratios in AlGaN/GaN heterostructures

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