Transport Study of Charge-Carrier Scattering in Monolayer WSe2

Andrew Y. Joe, Kateryna Pistunova, Kristen Kaasbjerg, Ke Wang, Bumho Kim, Daniel A. Rhodes, Takashi Taniguchi, Kenji Watanabe, James Hone, Tony Low, Luis A. Jauregui, Philip Kim

Research output: Contribution to journalArticlepeer-review

Abstract

Employing flux-grown single crystal WSe2, we report charge-carrier scattering behaviors measured in h-BN encapsulated monolayer field effect transistors. We observe a nonmonotonic change of transport mobility as a function of hole density in the degenerately doped sample, which can be explained by energy dependent scattering amplitude of strong defects calculated using the T-matrix approximation. Utilizing long mean-free path (>500 nm), we also demonstrate the high quality of our electronic devices by showing quantized conductance steps from an electrostatically defined quantum point contact, showing the potential for creating ultrahigh quality quantum optoelectronic devices based on atomically thin semiconductors.

Original languageEnglish (US)
Article number056303
JournalPhysical review letters
Volume132
Issue number5
DOIs
StatePublished - Feb 2 2024
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2024 American Physical Society.

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