This work employs novel SnO2 gel-like precursors in conjunction with sol-gel deposited ZrO2 gate dielectrics to realize high-performance transparent transistors. Representative devices show excellent performance and transparency, and deliver mobility of 103 cm2 V -1 s-1 in saturation at operation voltages as low as 2 V, a sub-threshold swing of only 0.3 V/decade, and Ion/Ioff of 104∼105.
|Original language||English (US)|
|Number of pages||6|
|State||Published - Feb 20 2013|
- metal oxides
- sol-gel process
- solution process
- thin film transistors