TRANSIENT SUBSTRATE CURRENT GENERATION AND DEVICE DEGRADATION IN CMOS CIRCUITS AT 77 K.

D. H. Ju, R. K. Reich, J. W. Schrankler, M. S. Holt, G. D. Kirchner

Research output: Contribution to journalConference articlepeer-review

11 Scopus citations

Abstract

The effects of hot carriers on CMOS device characteristics and circuit performance have been investigated at 77 K under pulsed-stress conditions. A CMOS inverter was subjected to a pulsed input at 77 K and the resulting substrate current generation and device degradation have been characterized. The result shows that hot-carrier effects at 77 K can be significant for CMOS devices having conventional source/drain structure under pulsed stress. The effects on CMOS circuit performance are also reported.

Original languageEnglish (US)
Pages (from-to)569-572
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - Jan 1 1985

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