Transient high-density injection in a semiconductor with traps

Betsy Ancker-Johnson; William P. Robbins; David B. Chang

doi:10.1063/1.1653032

Transient high-density injection in a semiconductor with traps

Betsy Ancker-Johnson, William P. Robbins, David B. Chang

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The properties of high-density injection into p-InSb at 77°K are compared with theory. An extension of Dean's theory is in satisfactory agreement with the extensive observations which include density-dependent growth times.

Original language	English (US)
Pages (from-to)	377-380
Number of pages	4
Journal	Applied Physics Letters
Volume	16
Issue number	10
DOIs	https://doi.org/10.1063/1.1653032
State	Published - 1970

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title = "Transient high-density injection in a semiconductor with traps",

abstract = "The properties of high-density injection into p-InSb at 77°K are compared with theory. An extension of Dean's theory is in satisfactory agreement with the extensive observations which include density-dependent growth times.",

author = "Betsy Ancker-Johnson and Robbins, {William P.} and Chang, {David B.}",

year = "1970",

doi = "10.1063/1.1653032",

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AU - Robbins, William P.

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Transient high-density injection in a semiconductor with traps

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