Transient high-density injection in a semiconductor with traps

Betsy Ancker-Johnson, William P. Robbins, David B. Chang

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

The properties of high-density injection into p-InSb at 77°K are compared with theory. An extension of Dean's theory is in satisfactory agreement with the extensive observations which include density-dependent growth times.

Original languageEnglish (US)
Pages (from-to)377-380
Number of pages4
JournalApplied Physics Letters
Volume16
Issue number10
DOIs
StatePublished - Dec 1 1970

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