Transforming insulating rutile single crystal into a fully ordered nanometer-thick transparent semiconductor

A. Singh, J. Hänisch, V. Matias, F. Ronning, N. Mara, D. Pohl, B. Rellinghaus, D. Reagor

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

Rutile single crystals treated with ion-beam preferential etching (IBPE) are investigated with electrical transport and transmission electron microscopy. The initially insulating single crystals show the formation of an oxygen vacancy-rich, highly ordered, thin conducting layer, below a crystalline rutile TiO2 surface layer. Carrier concentrations of 1019 cm -3 and very high mobilities of the order of 300 cm2 V-1 s-1 are observed in the nanolayers. The observations indicate that rutile single crystals can be effectively transformed into controlled conducting material using IBPE for creating a new breakthrough in transparent conducting media.

Original languageEnglish (US)
Article number415303
JournalNanotechnology
Volume21
Issue number41
DOIs
StatePublished - Oct 15 2010

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