Towards resonant THz detector: Devices based on Schottky diodes to 2DEG GaN/AlGaN

G. Cywinski; P. Sai; I. Yahniuk; P. Kruszewski; B. Grzywacz; J. Przybytek; P. Prystawko; A. Khachapuridze; K. Nowakowski-Szkudlarek; W. Knap; P. Wisniewski; B. Stonio; G. S. Simin; S. L. Rumyantsev

doi:10.23919/MIKON.2018.8405335

Towards resonant THz detector: Devices based on Schottky diodes to 2DEG GaN/AlGaN

G. Cywinski, P. Sai, I. Yahniuk, P. Kruszewski, B. Grzywacz, J. Przybytek, P. Prystawko, A. Khachapuridze, K. Nowakowski-Szkudlarek, W. Knap, P. Wisniewski, B. Stonio, G. S. Simin, S. L. Rumyantsev

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

We report on comparison studies between a novel transistor-like device and two dimensional Fin Field-effect transistor (2DEG FinFET) towards their applications in a THz resonant detector. Both device structures have been fabricated on the same wafer of GaN/AlGaN epistructure during one processing run. The proposed here the transistor-like structure has two side Schottky gates, which can be biased towards complete pinch-off the 2DEG channel in this device. The characteristic dimensions of all device structures are in the range of typical for the laser writer processing i.e. a few micrometers, however in the case of the transistor-like device we report on electronical tuned confinement, which works down to submicron range. At certain conditions, near to pinch-off region, it is possible to obtain one dimensional current flow. This feature is especially attractive for THz resonant detector approach, which will be discussed in details.

Original language	English (US)
Title of host publication	MIKON 2018 - 22nd International Microwave and Radar Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	715-718
Number of pages	4
ISBN (Electronic)	9788394942113
DOIs	https://doi.org/10.23919/MIKON.2018.8405335
State	Published - Jul 5 2018
Externally published	Yes
Event	22nd International Microwave and Radar Conference, MIKON 2018 - Poznan, Poland Duration: May 14 2018 → May 17 2018

Publication series

Name	MIKON 2018 - 22nd International Microwave and Radar Conference

Other

Other	22nd International Microwave and Radar Conference, MIKON 2018
Country	Poland
City	Poznan
Period	5/14/18 → 5/17/18

Keywords

GaN/AlGaN 2DEG
HEMT
THz resonant detector

Access

10.23919/MIKON.2018.8405335

Fingerprint Dive into the research topics of 'Towards resonant THz detector: Devices based on Schottky diodes to 2DEG GaN/AlGaN'. Together they form a unique fingerprint.

Cite this

Cywinski, G., Sai, P., Yahniuk, I., Kruszewski, P., Grzywacz, B., Przybytek, J., Prystawko, P., Khachapuridze, A., Nowakowski-Szkudlarek, K., Knap, W., Wisniewski, P., Stonio, B., Simin, G. S., & Rumyantsev, S. L. (2018). Towards resonant THz detector: Devices based on Schottky diodes to 2DEG GaN/AlGaN. In MIKON 2018 - 22nd International Microwave and Radar Conference (pp. 715-718). (MIKON 2018 - 22nd International Microwave and Radar Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/MIKON.2018.8405335

Towards resonant THz detector : Devices based on Schottky diodes to 2DEG GaN/AlGaN. / Cywinski, G.; Sai, P.; Yahniuk, I.; Kruszewski, P.; Grzywacz, B.; Przybytek, J.; Prystawko, P.; Khachapuridze, A.; Nowakowski-Szkudlarek, K.; Knap, W.; Wisniewski, P.; Stonio, B.; Simin, G. S.; Rumyantsev, S. L.

MIKON 2018 - 22nd International Microwave and Radar Conference. Institute of Electrical and Electronics Engineers Inc., 2018. p. 715-718 (MIKON 2018 - 22nd International Microwave and Radar Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Cywinski, G, Sai, P, Yahniuk, I, Kruszewski, P, Grzywacz, B, Przybytek, J, Prystawko, P, Khachapuridze, A, Nowakowski-Szkudlarek, K, Knap, W, Wisniewski, P, Stonio, B, Simin, GS & Rumyantsev, SL 2018, Towards resonant THz detector: Devices based on Schottky diodes to 2DEG GaN/AlGaN. in MIKON 2018 - 22nd International Microwave and Radar Conference. MIKON 2018 - 22nd International Microwave and Radar Conference, Institute of Electrical and Electronics Engineers Inc., pp. 715-718, 22nd International Microwave and Radar Conference, MIKON 2018, Poznan, Poland, 5/14/18. https://doi.org/10.23919/MIKON.2018.8405335

Cywinski G, Sai P, Yahniuk I, Kruszewski P, Grzywacz B, Przybytek J et al. Towards resonant THz detector: Devices based on Schottky diodes to 2DEG GaN/AlGaN. In MIKON 2018 - 22nd International Microwave and Radar Conference. Institute of Electrical and Electronics Engineers Inc. 2018. p. 715-718. (MIKON 2018 - 22nd International Microwave and Radar Conference). https://doi.org/10.23919/MIKON.2018.8405335

Cywinski, G. ; Sai, P. ; Yahniuk, I. ; Kruszewski, P. ; Grzywacz, B. ; Przybytek, J. ; Prystawko, P. ; Khachapuridze, A. ; Nowakowski-Szkudlarek, K. ; Knap, W. ; Wisniewski, P. ; Stonio, B. ; Simin, G. S. ; Rumyantsev, S. L. / Towards resonant THz detector : Devices based on Schottky diodes to 2DEG GaN/AlGaN. MIKON 2018 - 22nd International Microwave and Radar Conference. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 715-718 (MIKON 2018 - 22nd International Microwave and Radar Conference).

@inproceedings{19d38e4fbfd94272b49e5df41fd117d3,

title = "Towards resonant THz detector: Devices based on Schottky diodes to 2DEG GaN/AlGaN",

abstract = "We report on comparison studies between a novel transistor-like device and two dimensional Fin Field-effect transistor (2DEG FinFET) towards their applications in a THz resonant detector. Both device structures have been fabricated on the same wafer of GaN/AlGaN epistructure during one processing run. The proposed here the transistor-like structure has two side Schottky gates, which can be biased towards complete pinch-off the 2DEG channel in this device. The characteristic dimensions of all device structures are in the range of typical for the laser writer processing i.e. a few micrometers, however in the case of the transistor-like device we report on electronical tuned confinement, which works down to submicron range. At certain conditions, near to pinch-off region, it is possible to obtain one dimensional current flow. This feature is especially attractive for THz resonant detector approach, which will be discussed in details.",

keywords = "GaN/AlGaN 2DEG, HEMT, THz resonant detector",

author = "G. Cywinski and P. Sai and I. Yahniuk and P. Kruszewski and B. Grzywacz and J. Przybytek and P. Prystawko and A. Khachapuridze and K. Nowakowski-Szkudlarek and W. Knap and P. Wisniewski and B. Stonio and Simin, {G. S.} and Rumyantsev, {S. L.}",

year = "2018",

month = jul,

day = "5",

doi = "10.23919/MIKON.2018.8405335",

language = "English (US)",

series = "MIKON 2018 - 22nd International Microwave and Radar Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "715--718",

booktitle = "MIKON 2018 - 22nd International Microwave and Radar Conference",

note = "22nd International Microwave and Radar Conference, MIKON 2018 ; Conference date: 14-05-2018 Through 17-05-2018",

}

TY - GEN

T1 - Towards resonant THz detector

T2 - 22nd International Microwave and Radar Conference, MIKON 2018

AU - Cywinski, G.

AU - Sai, P.

AU - Yahniuk, I.

AU - Kruszewski, P.

AU - Grzywacz, B.

AU - Przybytek, J.

AU - Prystawko, P.

AU - Khachapuridze, A.

AU - Nowakowski-Szkudlarek, K.

AU - Knap, W.

AU - Wisniewski, P.

AU - Stonio, B.

AU - Simin, G. S.

AU - Rumyantsev, S. L.

PY - 2018/7/5

Y1 - 2018/7/5

N2 - We report on comparison studies between a novel transistor-like device and two dimensional Fin Field-effect transistor (2DEG FinFET) towards their applications in a THz resonant detector. Both device structures have been fabricated on the same wafer of GaN/AlGaN epistructure during one processing run. The proposed here the transistor-like structure has two side Schottky gates, which can be biased towards complete pinch-off the 2DEG channel in this device. The characteristic dimensions of all device structures are in the range of typical for the laser writer processing i.e. a few micrometers, however in the case of the transistor-like device we report on electronical tuned confinement, which works down to submicron range. At certain conditions, near to pinch-off region, it is possible to obtain one dimensional current flow. This feature is especially attractive for THz resonant detector approach, which will be discussed in details.

AB - We report on comparison studies between a novel transistor-like device and two dimensional Fin Field-effect transistor (2DEG FinFET) towards their applications in a THz resonant detector. Both device structures have been fabricated on the same wafer of GaN/AlGaN epistructure during one processing run. The proposed here the transistor-like structure has two side Schottky gates, which can be biased towards complete pinch-off the 2DEG channel in this device. The characteristic dimensions of all device structures are in the range of typical for the laser writer processing i.e. a few micrometers, however in the case of the transistor-like device we report on electronical tuned confinement, which works down to submicron range. At certain conditions, near to pinch-off region, it is possible to obtain one dimensional current flow. This feature is especially attractive for THz resonant detector approach, which will be discussed in details.

KW - GaN/AlGaN 2DEG

KW - HEMT

KW - THz resonant detector

UR - http://www.scopus.com/inward/record.url?scp=85050766339&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85050766339&partnerID=8YFLogxK

U2 - 10.23919/MIKON.2018.8405335

DO - 10.23919/MIKON.2018.8405335

M3 - Conference contribution

AN - SCOPUS:85050766339

T3 - MIKON 2018 - 22nd International Microwave and Radar Conference

SP - 715

EP - 718

BT - MIKON 2018 - 22nd International Microwave and Radar Conference

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 14 May 2018 through 17 May 2018

ER -