Abstract
We report on comparison studies between a novel transistor-like device and two dimensional Fin Field-effect transistor (2DEG FinFET) towards their applications in a THz resonant detector. Both device structures have been fabricated on the same wafer of GaN/AlGaN epistructure during one processing run. The proposed here the transistor-like structure has two side Schottky gates, which can be biased towards complete pinch-off the 2DEG channel in this device. The characteristic dimensions of all device structures are in the range of typical for the laser writer processing i.e. a few micrometers, however in the case of the transistor-like device we report on electronical tuned confinement, which works down to submicron range. At certain conditions, near to pinch-off region, it is possible to obtain one dimensional current flow. This feature is especially attractive for THz resonant detector approach, which will be discussed in details.
Original language | English (US) |
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Title of host publication | MIKON 2018 - 22nd International Microwave and Radar Conference |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 715-718 |
Number of pages | 4 |
ISBN (Electronic) | 9788394942113 |
DOIs | |
State | Published - Jul 5 2018 |
Externally published | Yes |
Event | 22nd International Microwave and Radar Conference, MIKON 2018 - Poznan, Poland Duration: May 14 2018 → May 17 2018 |
Publication series
Name | MIKON 2018 - 22nd International Microwave and Radar Conference |
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Other
Other | 22nd International Microwave and Radar Conference, MIKON 2018 |
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Country/Territory | Poland |
City | Poznan |
Period | 5/14/18 → 5/17/18 |
Bibliographical note
Funding Information:This work was partially supported by the National Science Centre, Poland allocated on the basis of Grant No. 2016/22/E/ST7/00526, by the ERANET RUS PLUS – TERASENS project, and by the Foundation for Polish Science through Grants No. TEAM/2016-3/25 and No. TEAM/2016-3/26.
Publisher Copyright:
© 2018 Warsaw University of Technology.
Keywords
- GaN/AlGaN 2DEG
- HEMT
- THz resonant detector