TY - GEN
T1 - Towards resonant THz detector
T2 - 22nd International Microwave and Radar Conference, MIKON 2018
AU - Cywinski, G.
AU - Sai, P.
AU - Yahniuk, I.
AU - Kruszewski, P.
AU - Grzywacz, B.
AU - Przybytek, J.
AU - Prystawko, P.
AU - Khachapuridze, A.
AU - Nowakowski-Szkudlarek, K.
AU - Knap, W.
AU - Wisniewski, P.
AU - Stonio, B.
AU - Simin, G. S.
AU - Rumyantsev, S. L.
PY - 2018/7/5
Y1 - 2018/7/5
N2 - We report on comparison studies between a novel transistor-like device and two dimensional Fin Field-effect transistor (2DEG FinFET) towards their applications in a THz resonant detector. Both device structures have been fabricated on the same wafer of GaN/AlGaN epistructure during one processing run. The proposed here the transistor-like structure has two side Schottky gates, which can be biased towards complete pinch-off the 2DEG channel in this device. The characteristic dimensions of all device structures are in the range of typical for the laser writer processing i.e. a few micrometers, however in the case of the transistor-like device we report on electronical tuned confinement, which works down to submicron range. At certain conditions, near to pinch-off region, it is possible to obtain one dimensional current flow. This feature is especially attractive for THz resonant detector approach, which will be discussed in details.
AB - We report on comparison studies between a novel transistor-like device and two dimensional Fin Field-effect transistor (2DEG FinFET) towards their applications in a THz resonant detector. Both device structures have been fabricated on the same wafer of GaN/AlGaN epistructure during one processing run. The proposed here the transistor-like structure has two side Schottky gates, which can be biased towards complete pinch-off the 2DEG channel in this device. The characteristic dimensions of all device structures are in the range of typical for the laser writer processing i.e. a few micrometers, however in the case of the transistor-like device we report on electronical tuned confinement, which works down to submicron range. At certain conditions, near to pinch-off region, it is possible to obtain one dimensional current flow. This feature is especially attractive for THz resonant detector approach, which will be discussed in details.
KW - GaN/AlGaN 2DEG
KW - HEMT
KW - THz resonant detector
UR - http://www.scopus.com/inward/record.url?scp=85050766339&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85050766339&partnerID=8YFLogxK
U2 - 10.23919/MIKON.2018.8405335
DO - 10.23919/MIKON.2018.8405335
M3 - Conference contribution
AN - SCOPUS:85050766339
T3 - MIKON 2018 - 22nd International Microwave and Radar Conference
SP - 715
EP - 718
BT - MIKON 2018 - 22nd International Microwave and Radar Conference
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 14 May 2018 through 17 May 2018
ER -