TY - JOUR
T1 - Towards optimization of ACRT schedules applied to the gradient freeze growth of cadmium zinc telluride
AU - Divecha, Mia S.
AU - Derby, Jeffrey J.
N1 - Publisher Copyright:
© 2017 Elsevier B.V.
PY - 2017/12/15
Y1 - 2017/12/15
N2 - Historically, the melt growth of II-VI crystals has benefitted from the application of the accelerated crucible rotation technique (ACRT). Here, we employ a comprehensive numerical model to assess the impact of two ACRT schedules designed for a cadmium zinc telluride growth system per the classical recommendations of Capper and co-workers. The “flow maximizing” ACRT schedule, with higher rotation, effectively mixes the solutal field in the melt but does not reduce supercooling adjacent to the growth interface. The ACRT schedule derived for stable Ekman flow, with lower rotation, proves more effective in reducing supercooling and promoting stable growth. These counterintuitive results highlight the need for more comprehensive studies on the optimization of ACRT schedules for specific growth systems and for desired growth outcomes.
AB - Historically, the melt growth of II-VI crystals has benefitted from the application of the accelerated crucible rotation technique (ACRT). Here, we employ a comprehensive numerical model to assess the impact of two ACRT schedules designed for a cadmium zinc telluride growth system per the classical recommendations of Capper and co-workers. The “flow maximizing” ACRT schedule, with higher rotation, effectively mixes the solutal field in the melt but does not reduce supercooling adjacent to the growth interface. The ACRT schedule derived for stable Ekman flow, with lower rotation, proves more effective in reducing supercooling and promoting stable growth. These counterintuitive results highlight the need for more comprehensive studies on the optimization of ACRT schedules for specific growth systems and for desired growth outcomes.
KW - A1. Computer simulation
KW - A1. Convection
KW - A1. Crystal morphology
KW - A1. Heat transfer
KW - A1. Mass transfer
KW - B1. Semiconducting II-VI materials
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U2 - 10.1016/j.jcrysgro.2017.10.001
DO - 10.1016/j.jcrysgro.2017.10.001
M3 - Article
AN - SCOPUS:85031933558
SN - 0022-0248
VL - 480
SP - 126
EP - 131
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
ER -