Total ionizing dose effects on HfO2-passivated black phosphorus transistors

C. Liang, Y. Su, E. X. Zhang, K. Ni, M. L. Alles, R. D. Schrimpf, D. M. Fleetwood, S. J. Koester

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19 Scopus citations


Electrical stress and 10-keV x-ray irradiation and annealing responses are evaluated for HfO2-passivated black phosphorous (BP) MOSFETs with HfO2 gate dielectrics. Device characteristics are stable during constant gate-voltage stress up to at least ±1 V. Significant negative threshold shifts, mobility degradation, and increases in subthreshold swing occur during both positive and negative bias irradiation. Hole trapping in the HfO2 gate dielectric dominates the TID response in these passivated BP MOSFETs. Reversibility of electrical parameters and magnitude of low frequency noise is observed during switched-bias annealing after irradiation. The voltage dependence of the low-frequency noise suggests that the trap distribution of the defects contributing to the noise becomes more uniform in energy after the devices are irradiated and annealed.

Original languageEnglish (US)
Article number7588073
Pages (from-to)170-175
Number of pages6
JournalIEEE Transactions on Nuclear Science
Issue number1
StatePublished - Jan 2017

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  • Black phosphorus
  • Low frequency noise
  • Switch bias annealing
  • Total ionizing dose


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