TY - JOUR
T1 - TM@gt-C3N3 monolayers
T2 - High-temperature ferromagnetism and high anisotropy
AU - Choudhuri, Indrani
AU - Garg, Priyanka
AU - Pathak, Biswarup
N1 - Publisher Copyright:
© 2016 The Royal Society of Chemistry.
PY - 2016
Y1 - 2016
N2 - High temperature ferromagnetic materials with planar surfaces are promising for spintronics applications. Using the state-of-the-art density functional theory (DFT) calculations, we predict a new phase of the carbon-nitride monolayer (gt-C3N3). Furthermore, pure and first-row transition metal (TM = Sc to Cu) embedded carbon nitride (TM@gt-C3N3) systems are studied for possible spintronics devices. Such Cr, Mn and Fe embedded gt-C3N3 systems show excellent dynamical, thermal and mechanical properties. High temperature ferromagnetism and high magnetic anisotropy energy (MAE) are envisaged in Cr, Mn and Fe incorporated gt-C3N3 systems. We find that Cr@gt-C3N3 is a ferromagnetic material with a Curie temperature of ∼338 K. The calculated magnetic anisotropy energy (MAE) in Cr@gt-C3N3 is 4.02 meV per Cr atom, which can be increased to 23.69 meV per Cr in the presence of an external electric field (ϵ). Thereby, such a material with high MAE can be very promising for spintronics device.
AB - High temperature ferromagnetic materials with planar surfaces are promising for spintronics applications. Using the state-of-the-art density functional theory (DFT) calculations, we predict a new phase of the carbon-nitride monolayer (gt-C3N3). Furthermore, pure and first-row transition metal (TM = Sc to Cu) embedded carbon nitride (TM@gt-C3N3) systems are studied for possible spintronics devices. Such Cr, Mn and Fe embedded gt-C3N3 systems show excellent dynamical, thermal and mechanical properties. High temperature ferromagnetism and high magnetic anisotropy energy (MAE) are envisaged in Cr, Mn and Fe incorporated gt-C3N3 systems. We find that Cr@gt-C3N3 is a ferromagnetic material with a Curie temperature of ∼338 K. The calculated magnetic anisotropy energy (MAE) in Cr@gt-C3N3 is 4.02 meV per Cr atom, which can be increased to 23.69 meV per Cr in the presence of an external electric field (ϵ). Thereby, such a material with high MAE can be very promising for spintronics device.
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U2 - 10.1039/c6tc03030k
DO - 10.1039/c6tc03030k
M3 - Article
AN - SCOPUS:84984914663
SN - 2050-7534
VL - 4
SP - 8253
EP - 8262
JO - Journal of Materials Chemistry C
JF - Journal of Materials Chemistry C
IS - 35
ER -