Titanium dioxide (TiO2)-based gate insulators

S. A. Campbell, H. S. Kim, D. C. Gilmer, B. He, T. Ma, W. L. Gladfelter

Research output: Contribution to journalArticlepeer-review

233 Scopus citations

Abstract

Titanium dioxide has been deposited on silicon for use as a high-permittivity gate insulator in an effort to produce low-leakage films with oxide equivalent thicknesses below 2.0 nm. Excellent electrical characteristics can be achieved, but TEM and electrical measurements have shown the presence of a low-resistivity interfacial layer that we take to be SiO2. The leakage current follows several mechanisms depending on the bias voltage. Reasonably good agreement has been seen between current-voltage measurements and a 1D quantum transport model.

Original languageEnglish (US)
Pages (from-to)383-392
Number of pages10
JournalIBM Journal of Research and Development
Volume43
Issue number3
DOIs
StatePublished - May 1999

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