Tin monochalcogenide heterostructures as mechanically rigid infrared band gap semiconductors

V. Ongun Özçelik, Mohammad Fathi, Javad G. Azadani, Tony Low

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Based on first-principles density functional calculations, we show that SnS and SnSe layers can form mechanically rigid heterostructures with the constituent puckered or buckled monolayers. Due to the strong interlayer coupling, the electronic wave functions of the conduction and valence band edges are delocalized across the heterostructure. The resultant band gaps of the heterostructures reside in the infrared region. With strain engineering, the heterostructure band gap undergoes a transition from indirect to direct in the puckered phase. Our results show that there is a direct correlation between the electronic wave function and the mechanical rigidity of the layered heterostructure.

Original languageEnglish (US)
Article number051003
JournalPhysical Review Materials
Volume2
Issue number5
DOIs
StatePublished - May 21 2018

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Tin
Heterojunctions
tin
Energy gap
Semiconductor materials
Infrared radiation
wave functions
Wave functions
electronics
rigidity
interlayers
conduction bands
engineering
valence
Electron transitions
Valence bands
Conduction bands
Rigidity
Density functional theory
Monolayers

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Tin monochalcogenide heterostructures as mechanically rigid infrared band gap semiconductors. / Özçelik, V. Ongun; Fathi, Mohammad; Azadani, Javad G.; Low, Tony.

In: Physical Review Materials, Vol. 2, No. 5, 051003, 21.05.2018.

Research output: Contribution to journalArticle

Özçelik, V. Ongun ; Fathi, Mohammad ; Azadani, Javad G. ; Low, Tony. / Tin monochalcogenide heterostructures as mechanically rigid infrared band gap semiconductors. In: Physical Review Materials. 2018 ; Vol. 2, No. 5.
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