Time resolved luminescence in n-i-p-i doping superlattices

W. Rehm, H. Künzel, G. H. Döhler, K. Ploog, P. Ruden

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

The luminescence spectrum of n-i-p-i doping superlattices shows a strong, excitation dependent red shift. Time resolved measurements of the decay of the luminescence provide a valuable tool for the determination of both radiative and non-radiative lifetimes. Our results obtained from GaAs n-i-p-i crystals, grown by molecular beam epitaxy, reconfirm that recombination across the indirect gap in real space is the mechanism responsible for the luminescence. The radiative lifetime increases by more than five orders of magnitude during detectable decay, in agreement with the theoretically expected behavior.

Original languageEnglish (US)
Pages (from-to)732-734
Number of pages3
JournalPhysica B+C
Volume117-118
Issue numberPART 2
DOIs
StatePublished - Mar 1983

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