Time evolution of second order susceptibility in GaAs following a fast intense laser pulse

T. Dumitrica, R. E. Allen

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Using the technique of tight-binding electron-ion dynamics, we have calculated the evolution of the non-linear susceptibility χ(2)(ω) in GaAs during the first few hundred femtoseconds following an ultrafast and ultra-intense laser pulse. Above a threshold fluence, our simulations show that χ(2)(ω) drops to zero, in agreement with the experimental measurements. The results indicate a rapid non-thermal transition from the original tetrahedral structure to a disordered structure, and support the conclusion that structural changes following ultrashort pulses are a direct consequence of bond destabilization.

Original languageEnglish (US)
Pages (from-to)653-656
Number of pages4
JournalSolid State Communications
Volume113
Issue number11
DOIs
StatePublished - Feb 18 2000

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