Abstract
We show that a ballistic quantum transport model based on the effective mass approximation can fairly well describe the I-V characteristics of armchair graphene nanoribbon FETs at all bias conditions, including regimes dominated by direct or band-to-band tunneling, provided first-order non-parabolic corrections be included in the simulation. This is achieved by means of an energy (position) dependent effective mass. The analysis is supported by comparisons with an atomistic tight-binding model.
Original language | English (US) |
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Pages (from-to) | 462-467 |
Number of pages | 6 |
Journal | Solid-State Electronics |
Volume | 53 |
Issue number | 4 |
DOIs | |
State | Published - Apr 2009 |
Bibliographical note
Funding Information:The authors are grateful to Dr. Giorgio Cinacchi for providing DFT data. This work has been supported by the EU FP7 IST Project GRAND (Contract No. 215752) via the IU.NET Consortium.
Copyright:
Copyright 2009 Elsevier B.V., All rights reserved.
Keywords
- GNR-FET
- Graphene nanoelectronics
- Non-equilibrium green functions
- Quantum transport
- Tight-binding