Tight-binding and effective mass modeling of armchair graphene nanoribbon FETs

Roberto Grassi, Stefano Poli, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani

Research output: Contribution to journalArticle

33 Scopus citations

Abstract

We show that a ballistic quantum transport model based on the effective mass approximation can fairly well describe the I-V characteristics of armchair graphene nanoribbon FETs at all bias conditions, including regimes dominated by direct or band-to-band tunneling, provided first-order non-parabolic corrections be included in the simulation. This is achieved by means of an energy (position) dependent effective mass. The analysis is supported by comparisons with an atomistic tight-binding model.

Original languageEnglish (US)
Pages (from-to)462-467
Number of pages6
JournalSolid-State Electronics
Volume53
Issue number4
DOIs
StatePublished - Apr 1 2009

Keywords

  • GNR-FET
  • Graphene nanoelectronics
  • Non-equilibrium green functions
  • Quantum transport
  • Tight-binding

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