Tight-binding and effective mass modeling of armchair graphene nanoribbon FETs

Roberto Grassi, Stefano Poli, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani

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36 Scopus citations

Abstract

We show that a ballistic quantum transport model based on the effective mass approximation can fairly well describe the I-V characteristics of armchair graphene nanoribbon FETs at all bias conditions, including regimes dominated by direct or band-to-band tunneling, provided first-order non-parabolic corrections be included in the simulation. This is achieved by means of an energy (position) dependent effective mass. The analysis is supported by comparisons with an atomistic tight-binding model.

Original languageEnglish (US)
Pages (from-to)462-467
Number of pages6
JournalSolid-State Electronics
Volume53
Issue number4
DOIs
StatePublished - Apr 2009

Bibliographical note

Funding Information:
The authors are grateful to Dr. Giorgio Cinacchi for providing DFT data. This work has been supported by the EU FP7 IST Project GRAND (Contract No. 215752) via the IU.NET Consortium.

Copyright:
Copyright 2009 Elsevier B.V., All rights reserved.

Keywords

  • GNR-FET
  • Graphene nanoelectronics
  • Non-equilibrium green functions
  • Quantum transport
  • Tight-binding

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