TY - GEN
T1 - Tight-binding and effective mass modeling of armchair carbon nanoribbon FETs
AU - Grassi, Roberto
AU - Poli, Stefano
AU - Gnani, Elena
AU - Gnudi, Antonio
AU - Reggiani, Susanna
AU - Baccarani, Giorgio
PY - 2008/8/14
Y1 - 2008/8/14
N2 - We show that a ballistic quantum transport model based on the effective mass approximation can fairly well describe the I-V characteristics of armchair carbon nanoribbon FETs, in all bias conditions, including the regimes dominated by direct or band-to-bandtunneling, provided first-order nonparabolic corrections are included in the simulation. This is achieved by means of an energy (position) dependent effective mass. The analysis is supported by comparisons with a full atomistic tight-binding model.
AB - We show that a ballistic quantum transport model based on the effective mass approximation can fairly well describe the I-V characteristics of armchair carbon nanoribbon FETs, in all bias conditions, including the regimes dominated by direct or band-to-bandtunneling, provided first-order nonparabolic corrections are included in the simulation. This is achieved by means of an energy (position) dependent effective mass. The analysis is supported by comparisons with a full atomistic tight-binding model.
UR - http://www.scopus.com/inward/record.url?scp=49049107585&partnerID=8YFLogxK
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U2 - 10.1109/ULIS.2008.4527154
DO - 10.1109/ULIS.2008.4527154
M3 - Conference contribution
AN - SCOPUS:49049107585
SN - 9781424417308
T3 - ULIS 2008 - 9th International Conference on ULtimate Integration of Silicon
SP - 121
EP - 124
BT - ULIS 2008 - 9th International Conference on ULtimate Integration of Silicon
T2 - 9th International Conference on ULtimate Integration of Silicon, ULIS 2008
Y2 - 13 March 2008 through 14 March 2008
ER -