Tight-binding and effective mass modeling of armchair carbon nanoribbon FETs

Roberto Grassi, Stefano Poli, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

We show that a ballistic quantum transport model based on the effective mass approximation can fairly well describe the I-V characteristics of armchair carbon nanoribbon FETs, in all bias conditions, including the regimes dominated by direct or band-to-bandtunneling, provided first-order nonparabolic corrections are included in the simulation. This is achieved by means of an energy (position) dependent effective mass. The analysis is supported by comparisons with a full atomistic tight-binding model.

Original languageEnglish (US)
Title of host publicationULIS 2008 - 9th International Conference on ULtimate Integration of Silicon
Pages121-124
Number of pages4
DOIs
StatePublished - Aug 14 2008
Event9th International Conference on ULtimate Integration of Silicon, ULIS 2008 -
Duration: Mar 13 2008Mar 14 2008

Publication series

NameULIS 2008 - 9th International Conference on ULtimate Integration of Silicon

Other

Other9th International Conference on ULtimate Integration of Silicon, ULIS 2008
Period3/13/083/14/08

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