Thin‐Layer Dielectrics in the Pb[(Mg_1/3Nb_2/3)_1‐xTi_x]O₃ System

Thin layers of Pb[(Mg_1/3Nb_2/3)_1–xTi_x]O₃ (PMNT) were prepared by spin casting alkoxide‐based solutions on platinized Si. The effects of additives, heat treatment, and composition (x= 0 to 0.9) on perovskite phase development, ceramic microstructure, and dielectric properties are reported. Depending upon the processing conditions, ceramic thin layers could be formed in a nonferroelectric pyrochlore phase (A₂B₂O₆) or in a ferroelectric perovskite phase (ABO₃). The dimensions of the pyrochlore and perovskite units cells were related and increased with Mg and Nb contents. To minmize pyrochlore formation, the most effective processing method involved rapid heat treatment between successive solution depositions. Phase development and microstructure were also affected by solution additives. Additions of benzoic acid were found to affect the structure in solution and the later organic pyrolysis behavior from thin layers. The effect of composition on the dielectric and ferroelectric properties is also reported.