We report thin-film transistors (TFTs) capable of controlling mobilities in a broad range using self-assembled nanocomposite multilayers. Single-walled carbon nanotubes (SWNTs) and SiO2 nanoparticles are vertically stacked on a substrate as the semiconducting and dielectric materials, respectively. The number of assembled layers can adjust the nanotube interconnection and tune the mobilities of the transistors. Our experiments show that the mobility can be enhanced to 35 times, and the highest observed mobility is 333.04 cm2/V s. Furthermore, we find that the reliability of the devices is increased with the increasing number of SWNT layers in the film. Our results demonstrate an effective technique to produce reliable and high-performance thin-film micro/nanoelectronic devices.
Bibliographical noteFunding Information:
This work is partially supported by the Defense Advanced Research Projects Agency (DARPA) MEMS/NEMS Fundamental Research Program through the Micro/Nano Fluidic Fundamentals Focus (MF3) Center. We also acknowledge the Nanofabrication Center and Characterization Facility at the University of Minnesota for the help with the fabrication and characterization.
Copyright 2009 Elsevier B.V., All rights reserved.
- Layer-by-layer self-assembly
- Single-walled carbon nanotube
- Thin-film transistor