Thin film deposition of an n-type organic semiconductor by ink-jet printing technique

Yuming Ai; Yi Liu; Tianhong Cui; Kody Varahramyan

doi:10.1016/j.tsf.2003.11.187

Thin film deposition of an n-type organic semiconductor by ink-jet printing technique

Yuming Ai, Yi Liu, Tianhong Cui, Kody Varahramyan

Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

An n-type organic material, 1,4,5,8-naphthalene-tetracarboxylic dianhydride (NTCDA), was successfully deposited and patterned on a SiO ₂/Si wafer by the ink-jet printing technique. Dimethylformamide (DMF) was selected as the solvent in the processing of the ink-jet solution, NTCDA. After thermal annealing, the NTCDA thin film showed higher conductivity than the NTCDA thin film deposited by vacuum sublimation. Degradation of conductivity with time was found when the thin film was open to an ambient atmosphere.

Original language	English (US)
Pages (from-to)	312-315
Number of pages	4
Journal	Thin Solid Films
Volume	450
Issue number	2
DOIs	https://doi.org/10.1016/j.tsf.2003.11.187
State	Published - Mar 1 2004

Keywords

Conductivity
Ink-jet printing
Solution processing
n-type polymer

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abstract = "An n-type organic material, 1,4,5,8-naphthalene-tetracarboxylic dianhydride (NTCDA), was successfully deposited and patterned on a SiO 2/Si wafer by the ink-jet printing technique. Dimethylformamide (DMF) was selected as the solvent in the processing of the ink-jet solution, NTCDA. After thermal annealing, the NTCDA thin film showed higher conductivity than the NTCDA thin film deposited by vacuum sublimation. Degradation of conductivity with time was found when the thin film was open to an ambient atmosphere.",

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AU - Ai, Yuming

AU - Liu, Yi

AU - Cui, Tianhong

AU - Varahramyan, Kody

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N2 - An n-type organic material, 1,4,5,8-naphthalene-tetracarboxylic dianhydride (NTCDA), was successfully deposited and patterned on a SiO 2/Si wafer by the ink-jet printing technique. Dimethylformamide (DMF) was selected as the solvent in the processing of the ink-jet solution, NTCDA. After thermal annealing, the NTCDA thin film showed higher conductivity than the NTCDA thin film deposited by vacuum sublimation. Degradation of conductivity with time was found when the thin film was open to an ambient atmosphere.

AB - An n-type organic material, 1,4,5,8-naphthalene-tetracarboxylic dianhydride (NTCDA), was successfully deposited and patterned on a SiO 2/Si wafer by the ink-jet printing technique. Dimethylformamide (DMF) was selected as the solvent in the processing of the ink-jet solution, NTCDA. After thermal annealing, the NTCDA thin film showed higher conductivity than the NTCDA thin film deposited by vacuum sublimation. Degradation of conductivity with time was found when the thin film was open to an ambient atmosphere.

KW - Conductivity

KW - Ink-jet printing

KW - Solution processing

KW - n-type polymer

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Thin film deposition of an n-type organic semiconductor by ink-jet printing technique

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