Thermopower of nanocrystalline germanium/hydrogenated amorphous silicon composite thin films

K. Bodurtha; J. Kakalios

doi:10.1063/1.4832780

Thermopower of nanocrystalline germanium/hydrogenated amorphous silicon composite thin films

K. Bodurtha
, J. Kakalios

Physics and Astronomy (Twin Cities)

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Thin films consisting of hydrogenated amorphous silicon (a-Si:H), in which germanium nanocrystals (nc-Ge) are embedded, have been synthesized using a dual-chamber co-deposition system. The thermopower and conductivity are studied as the germanium crystal fraction X_Ge is systematically increased. For X_Ge < 10%, the thermopower is n-type (as found in undoped a-Si:H), while for X_Ge > 25% p-type transport is observed. For films with 10% < X_Ge < 25%, the thermopower shifts from n-type to p-type as the temperature is lowered from 450 K to 350 K. The n-type to p-type transition is sharper than expected from a standard two-channel parallel conduction model for charge transport.

Original language	English (US)
Article number	193705
Journal	Journal of Applied Physics
Volume	114
Issue number	19
DOIs	https://doi.org/10.1063/1.4832780
State	Published - Nov 21 2013

Bibliographical note

Funding Information:
We gratefully acknowledge fruitful discussions with B. Shklovskii and J. Chelikowsky. This work was partially supported by NSF Grant DMR-0705675, the NINN Characterization Facility, the Nanofabrication Center, an Xcel Energy grant under RDF Contract #RD3-25, NREL Sub-Contract XEA-9-99012-01, and the University of Minnesota.

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title = "Thermopower of nanocrystalline germanium/hydrogenated amorphous silicon composite thin films",

abstract = "Thin films consisting of hydrogenated amorphous silicon (a-Si:H), in which germanium nanocrystals (nc-Ge) are embedded, have been synthesized using a dual-chamber co-deposition system. The thermopower and conductivity are studied as the germanium crystal fraction XGe is systematically increased. For XGe < 10\%, the thermopower is n-type (as found in undoped a-Si:H), while for XGe > 25\% p-type transport is observed. For films with 10\% < XGe < 25\%, the thermopower shifts from n-type to p-type as the temperature is lowered from 450 K to 350 K. The n-type to p-type transition is sharper than expected from a standard two-channel parallel conduction model for charge transport.",

author = "K. Bodurtha and J. Kakalios",

note = "Funding Information: We gratefully acknowledge fruitful discussions with B. Shklovskii and J. Chelikowsky. This work was partially supported by NSF Grant DMR-0705675, the NINN Characterization Facility, the Nanofabrication Center, an Xcel Energy grant under RDF Contract \#RD3-25, NREL Sub-Contract XEA-9-99012-01, and the University of Minnesota.",

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AU - Bodurtha, K.

AU - Kakalios, J.

N1 - Funding Information: We gratefully acknowledge fruitful discussions with B. Shklovskii and J. Chelikowsky. This work was partially supported by NSF Grant DMR-0705675, the NINN Characterization Facility, the Nanofabrication Center, an Xcel Energy grant under RDF Contract #RD3-25, NREL Sub-Contract XEA-9-99012-01, and the University of Minnesota.

PY - 2013/11/21

Y1 - 2013/11/21

N2 - Thin films consisting of hydrogenated amorphous silicon (a-Si:H), in which germanium nanocrystals (nc-Ge) are embedded, have been synthesized using a dual-chamber co-deposition system. The thermopower and conductivity are studied as the germanium crystal fraction XGe is systematically increased. For XGe < 10%, the thermopower is n-type (as found in undoped a-Si:H), while for XGe > 25% p-type transport is observed. For films with 10% < XGe < 25%, the thermopower shifts from n-type to p-type as the temperature is lowered from 450 K to 350 K. The n-type to p-type transition is sharper than expected from a standard two-channel parallel conduction model for charge transport.

AB - Thin films consisting of hydrogenated amorphous silicon (a-Si:H), in which germanium nanocrystals (nc-Ge) are embedded, have been synthesized using a dual-chamber co-deposition system. The thermopower and conductivity are studied as the germanium crystal fraction XGe is systematically increased. For XGe < 10%, the thermopower is n-type (as found in undoped a-Si:H), while for XGe > 25% p-type transport is observed. For films with 10% < XGe < 25%, the thermopower shifts from n-type to p-type as the temperature is lowered from 450 K to 350 K. The n-type to p-type transition is sharper than expected from a standard two-channel parallel conduction model for charge transport.

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Thermopower of nanocrystalline germanium/hydrogenated amorphous silicon composite thin films

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