Abstract
The Seebeck coefficient and dark conductivity for undoped, and n-type doped thin film hydrogenated amorphous silicon (a-Si:H), and mixed-phase films with silicon nanocrystalline inclusions (a/nc-Si:H) are reported. For both undoped a-Si:H and undoped a/nc-Si:H films, the dark conductivity is enhanced by the addition of silicon nanocrystals. The thermopower of the undoped a/nc-Si:H has a lower Seebeck coefficient, and similar temperature dependence, to that observed for undoped a-Si:H. In contrast, the addition of nanoparticles in doped a/nc-Si:H thin films leads to a negative Seebeck coefficient (consistent with n-type doping) with a positive temperature dependence, that is, the Seebeck coefficient becomes larger at higher temperatures. The temperature dependence of the thermopower of the doped a/nc-Si:H is similar to that observed in unhydrogenated a-Si grown by sputtering or following high-temperature annealing of a-Si:H, suggesting that charge transport may occur via hopping in these materials.
Original language | English (US) |
---|---|
Title of host publication | Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2010 |
Pages | 369-374 |
Number of pages | 6 |
Volume | 1245 |
State | Published - Dec 24 2010 |
Event | 2010 MRS Spring Meeting - San Francisco, CA, United States Duration: Apr 5 2010 → Apr 9 2010 |
Other
Other | 2010 MRS Spring Meeting |
---|---|
Country/Territory | United States |
City | San Francisco, CA |
Period | 4/5/10 → 4/9/10 |