Thermoelectric properties of doped and undoped mixed phase hydrogenated amorphous/nanocrystalline silicon thin films

Y. Adjallah, C. Blackwell, James Kakalios

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The Seebeck coefficient and dark conductivity for undoped, and n-type doped thin film hydrogenated amorphous silicon (a-Si:H), and mixed-phase films with silicon nanocrystalline inclusions (a/nc-Si:H) are reported. For both undoped a-Si:H and undoped a/nc-Si:H films, the dark conductivity is enhanced by the addition of silicon nanocrystals. The thermopower of the undoped a/nc-Si:H has a lower Seebeck coefficient, and similar temperature dependence, to that observed for undoped a-Si:H. In contrast, the addition of nanoparticles in doped a/nc-Si:H thin films leads to a negative Seebeck coefficient (consistent with n-type doping) with a positive temperature dependence, that is, the Seebeck coefficient becomes larger at higher temperatures. The temperature dependence of the thermopower of the doped a/nc-Si:H is similar to that observed in unhydrogenated a-Si grown by sputtering or following high-temperature annealing of a-Si:H, suggesting that charge transport may occur via hopping in these materials.

Original languageEnglish (US)
Title of host publicationAmorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2010
Pages369-374
Number of pages6
Volume1245
StatePublished - Dec 24 2010
Event2010 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 5 2010Apr 9 2010

Other

Other2010 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/5/104/9/10

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