Thermally activated magnetization back-hopping based true random number generator in nano-ring magnetic tunnel junctions

Jianying Qin, Xiao Wang, Tao Qu, Caihua Wan, Li Huang, Chenyang Guo, Tian Yu, Hongxiang Wei, Xiufeng Han

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

A true random number generator based on the magnetization backhopping process in nano-ring magnetic tunnel junctions is demonstrated in this work. The impact of environmental temperature (T) and current pulse width (τ) on backhopping is investigated statistically by experiments, micromagnetic simulations, and theoretical analysis. The backhopping probability increases at high T and wide τ, as explained by the combined effect of thermal fluctuation and spin-transfer-torque noise. The magnetoresistance at backhopping is randomly distributed over a large operational current range. This manifestation of backhopping in magnetic tunnel junctions can be used as the basic unit of a true random number generator.

Original languageEnglish (US)
Article number112401
JournalApplied Physics Letters
Volume114
Issue number11
DOIs
StatePublished - Mar 18 2019

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