Thermally activated deviations from quantum Hall plateaux

M. M. Fogler, B. I. Shklovskii

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

The Hall conductivity σxy of a two-dimensional electron system is quantized in units of e2 h when the Fermi level is located in the gap between two Landau levels. We consider the deviation of σxy from a quantized value caused by the thermal activation of electrons to the extended states for the case of a long range random potential. This deviation is of the form σxy*exp( -Δ T). The prefactor σxy* is equal to e2 h at temperatures above a characteristic value T2. Below T2, σxy* decays according to a power law: σxy* = e2 h( T T2)γ. The generalization to fractional Hall plateaux is discussed.

Original languageEnglish (US)
Pages (from-to)503-507
Number of pages5
JournalSolid State Communications
Volume94
Issue number7
DOIs
StatePublished - May 1995

Keywords

  • A. semiconductors D. quantum Hall effect

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