Thermally activated deviations from quantum Hall plateaux

M. M. Fogler; B. I. Shklovskii

doi:10.1016/0038-1098(95)00119-0

Thermally activated deviations from quantum Hall plateaux

M. M. Fogler, B. I. Shklovskii

Physics and Astronomy (Twin Cities)

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The Hall conductivity σ_xy of a two-dimensional electron system is quantized in units of e² h when the Fermi level is located in the gap between two Landau levels. We consider the deviation of σ_xy from a quantized value caused by the thermal activation of electrons to the extended states for the case of a long range random potential. This deviation is of the form σ_xy^*exp( -Δ T). The prefactor σ_xy^* is equal to e² h at temperatures above a characteristic value T₂. Below T₂, σ_xy^* decays according to a power law: σ_xy^* = e² h( T T₂)^γ. The generalization to fractional Hall plateaux is discussed.

Original language	English (US)
Pages (from-to)	503-507
Number of pages	5
Journal	Solid State Communications
Volume	94
Issue number	7
DOIs	https://doi.org/10.1016/0038-1098(95)00119-0
State	Published - May 1995

Bibliographical note

Funding Information:
Useful discussionsw ith I. M. Ruzin and D. G. Polya-kov are greatly appreciated.T hii work wss supported by NSF under Grant No. DMR-9321417.

Keywords

A. semiconductors D. quantum Hall effect

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10.1016/0038-1098(95)00119-0

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@article{3bf8d3a028374b11b6c014ceed7d3e51,

title = "Thermally activated deviations from quantum Hall plateaux",

abstract = "The Hall conductivity σxy of a two-dimensional electron system is quantized in units of e2 h when the Fermi level is located in the gap between two Landau levels. We consider the deviation of σxy from a quantized value caused by the thermal activation of electrons to the extended states for the case of a long range random potential. This deviation is of the form σxy*exp( -Δ T). The prefactor σxy* is equal to e2 h at temperatures above a characteristic value T2. Below T2, σxy* decays according to a power law: σxy* = e2 h( T T2)γ. The generalization to fractional Hall plateaux is discussed.",

keywords = "A. semiconductors D. quantum Hall effect",

author = "Fogler, {M. M.} and Shklovskii, {B. I.}",

note = "Funding Information: Useful discussionsw ith I. M. Ruzin and D. G. Polya-kov are greatly appreciated.T hii work wss supported by NSF under Grant No. DMR-9321417.",

year = "1995",

month = may,

doi = "10.1016/0038-1098(95)00119-0",

language = "English (US)",

volume = "94",

pages = "503--507",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Limited",

number = "7",

}

TY - JOUR

T1 - Thermally activated deviations from quantum Hall plateaux

AU - Fogler, M. M.

AU - Shklovskii, B. I.

N1 - Funding Information: Useful discussionsw ith I. M. Ruzin and D. G. Polya-kov are greatly appreciated.T hii work wss supported by NSF under Grant No. DMR-9321417.

PY - 1995/5

Y1 - 1995/5

N2 - The Hall conductivity σxy of a two-dimensional electron system is quantized in units of e2 h when the Fermi level is located in the gap between two Landau levels. We consider the deviation of σxy from a quantized value caused by the thermal activation of electrons to the extended states for the case of a long range random potential. This deviation is of the form σxy*exp( -Δ T). The prefactor σxy* is equal to e2 h at temperatures above a characteristic value T2. Below T2, σxy* decays according to a power law: σxy* = e2 h( T T2)γ. The generalization to fractional Hall plateaux is discussed.

AB - The Hall conductivity σxy of a two-dimensional electron system is quantized in units of e2 h when the Fermi level is located in the gap between two Landau levels. We consider the deviation of σxy from a quantized value caused by the thermal activation of electrons to the extended states for the case of a long range random potential. This deviation is of the form σxy*exp( -Δ T). The prefactor σxy* is equal to e2 h at temperatures above a characteristic value T2. Below T2, σxy* decays according to a power law: σxy* = e2 h( T T2)γ. The generalization to fractional Hall plateaux is discussed.

KW - A. semiconductors D. quantum Hall effect

UR - http://www.scopus.com/inward/record.url?scp=0029304923&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029304923&partnerID=8YFLogxK

U2 - 10.1016/0038-1098(95)00119-0

DO - 10.1016/0038-1098(95)00119-0

M3 - Article

AN - SCOPUS:0029304923

SN - 0038-1098

VL - 94

SP - 503

EP - 507

JO - Solid State Communications

JF - Solid State Communications

IS - 7

ER -

Thermally activated deviations from quantum Hall plateaux

Abstract

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