Thermal transport across few-layer boron nitride encased by silica

Yuxiang Ni, Jiechao Jiang, Efstathios Meletis, Traian Dumitricə

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19 Scopus citations

Abstract

Two dimensional hexagonal boron nitride (h-BN) attracted attention for use in applications. Using equilibrium molecular dynamics, we examine the phonon transport in few-layer h-BN encased by silica (SiO2). We report large interfacial thermal resistances, of about 2.2 × 10-8 m2 K W-1, which are not sensitive to the number of h-BN layers or the SiO2 crystallinity. The h-BN/SiO2 superlattices exhibit ultra-low thermal conductivities across layers, as low as 0.3 W/m K. They are structurally stable up to 2000 K while retaining the low-thermal conductivity attributes. Our simulations indicate that incorporation of h-BN layers and nanoparticles in silica could establish thermal barriers and heat spreading paths, useful for high performance coatings and electronic device applications.

Original languageEnglish (US)
Article number031603
JournalApplied Physics Letters
Volume107
Issue number3
DOIs
StatePublished - Jul 20 2015

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