The thermal stability of strained Si on relaxed Si1-xGex structures annealed at 1000 °C was investigated using high-resolution x-ray diffraction, Raman spectroscopy and transmission electron microscopy. Interdiffusion at the Si/Si1-xGex interface is negligible for annealing times <30 sec and is independent of the initial Si layer thickness and the composition of the Si1-xGex layer. In all cases the Si layers remained nearly fully strained, but a significant density of misfit dislocations was seen in layers that exceeded the critical thickness for dislocation glide. The Si layer thickness could be measured for layers as thin as 7 nm.
|Original language||English (US)|
|Number of pages||6|
|Journal||Materials Research Society Symposium - Proceedings|
|State||Published - Jan 1 2002|
|Event||Materials Issues in Novel Si-Based Technology - Boston, MA, United States|
Duration: Nov 26 2001 → Nov 28 2001