Thermal stability of strained Si on relaxed Si1-xGex buffer layers

P. M. Mooney, S. J. Koester, J. A. Ott, J. L. Jordan-Sweet, J. O. Chu, K. K. Chan

Research output: Contribution to journalConference articlepeer-review

6 Scopus citations


The thermal stability of strained Si on relaxed Si1-xGex structures annealed at 1000 °C was investigated using high-resolution x-ray diffraction, Raman spectroscopy and transmission electron microscopy. Interdiffusion at the Si/Si1-xGex interface is negligible for annealing times <30 sec and is independent of the initial Si layer thickness and the composition of the Si1-xGex layer. In all cases the Si layers remained nearly fully strained, but a significant density of misfit dislocations was seen in layers that exceeded the critical thickness for dislocation glide. The Si layer thickness could be measured for layers as thin as 7 nm.

Original languageEnglish (US)
Pages (from-to)3-8
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 2002
EventMaterials Issues in Novel Si-Based Technology - Boston, MA, United States
Duration: Nov 26 2001Nov 28 2001


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