Thermal modeling of III-nitride heterostructure field effect transistors

T. Li, P. P. Ruden, J. D. Albrecht, M. G. Ancona, R. Anholt

Research output: Contribution to journalArticle

Abstract

The output characteristics of AlGaN/GaN semiconductor heterostructure field effect transistors are strongly dependent on the ambient temperature of the channel region due to relatively large variations in the electron drift velocity with temperature. A model to simulate the heat flow in AlGaN/GaN HFETs on sapphire and SiC substrates is presented. The nonlinearity of the problem arising from the temperature dependencies of the III-nitride and substrate thermal conductivities is examined through the technique of self-consistent boundary conditions. It is found that the use of the linearizing Kirchhoff transformation is a good approximation for these systems. Alternative approaches of heatsinking the devices from the top of the wafer are explored also.

Original languageEnglish (US)
Pages (from-to)T6261-T6266
JournalMaterials Research Society Symposium-Proceedings
Volume622
DOIs
StatePublished - 2000

Fingerprint Dive into the research topics of 'Thermal modeling of III-nitride heterostructure field effect transistors'. Together they form a unique fingerprint.

  • Cite this