Recent evidence that the electronic properties of doped hydrogenated amorphous silicon are influenced by thermal equilibrium processes are reviewed. The slow relaxation of the localized state distribution follows a stretched exponential time decay which we attribute to the dispersive diffusion of bonded hydrogen.
Bibliographical noteFunding Information:
This researchw as performedin collaborationw ith W. B. Jackson, C. C. Tsai, T. M. Hayes, M. Hack and R. Thompson and is supported by the Solar Energy Research Institute.
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