Abstract
Recent evidence that the electronic properties of doped hydrogenated amorphous silicon are influenced by thermal equilibrium processes are reviewed. The slow relaxation of the localized state distribution follows a stretched exponential time decay which we attribute to the dispersive diffusion of bonded hydrogen.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 767-774 |
| Number of pages | 8 |
| Journal | Journal of Non-Crystalline Solids |
| Volume | 97-98 |
| Issue number | PART 2 |
| DOIs | |
| State | Published - Dec 2 1987 |
Bibliographical note
Funding Information:This researchw as performedin collaborationw ith W. B. Jackson, C. C. Tsai, T. M. Hayes, M. Hack and R. Thompson and is supported by the Solar Energy Research Institute.