Thermal equilibrium processes in doped amorphous silicon

J. Kakalios, R. A. Street

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Recent evidence that the electronic properties of doped hydrogenated amorphous silicon are influenced by thermal equilibrium processes are reviewed. The slow relaxation of the localized state distribution follows a stretched exponential time decay which we attribute to the dispersive diffusion of bonded hydrogen.

Original languageEnglish (US)
Pages (from-to)767-774
Number of pages8
JournalJournal of Non-Crystalline Solids
Issue numberPART 2
StatePublished - Dec 2 1987

Bibliographical note

Funding Information:
This researchw as performedin collaborationw ith W. B. Jackson, C. C. Tsai, T. M. Hayes, M. Hack and R. Thompson and is supported by the Solar Energy Research Institute.

Copyright 2014 Elsevier B.V., All rights reserved.

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