THERMAL EQUILIBRATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN DOPING MODULATED AMORPHOUS SILICON.

J. Kakalios; R. A. Street

doi:10.1007/978-1-4613-1841-5_57

THERMAL EQUILIBRATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN DOPING MODULATED AMORPHOUS SILICON.

J. Kakalios
, R. A. Street

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

The persistent photoconductivity effect in doping modulated amorphous silicon is compared to the light-induced conductivity changes in compensated amorphous silicon. The recent proposal that the defect structure of doped amorphous silicon is in metastable thermal equilibrium is able to account for the metastable excess conductivity in both systems, and for the several orders of magnitude difference in exposure times needed.

Original language	English (US)
Title of host publication	Disord Semicond
Publisher	Plenum Press
ISBN (Print)	0306424940, 9780306424946
DOIs	https://doi.org/10.1007/978-1-4613-1841-5_57
State	Published - 1987
Externally published	Yes

Publisher link

10.1007/978-1-4613-1841-5_57

Find It

Find It at U of M Libraries

Cite this

@inbook{2be48f5323624ac785a70516c650d869,

title = "THERMAL EQUILIBRATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN DOPING MODULATED AMORPHOUS SILICON.",

abstract = "The persistent photoconductivity effect in doping modulated amorphous silicon is compared to the light-induced conductivity changes in compensated amorphous silicon. The recent proposal that the defect structure of doped amorphous silicon is in metastable thermal equilibrium is able to account for the metastable excess conductivity in both systems, and for the several orders of magnitude difference in exposure times needed.",

author = "J. Kakalios and Street, \{R. A.\}",

year = "1987",

doi = "10.1007/978-1-4613-1841-5\_57",

language = "English (US)",

isbn = "0306424940",

booktitle = "Disord Semicond",

publisher = "Plenum Press",

}

TY - CHAP

T1 - THERMAL EQUILIBRATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN DOPING MODULATED AMORPHOUS SILICON.

AU - Kakalios, J.

AU - Street, R. A.

PY - 1987

Y1 - 1987

N2 - The persistent photoconductivity effect in doping modulated amorphous silicon is compared to the light-induced conductivity changes in compensated amorphous silicon. The recent proposal that the defect structure of doped amorphous silicon is in metastable thermal equilibrium is able to account for the metastable excess conductivity in both systems, and for the several orders of magnitude difference in exposure times needed.

AB - The persistent photoconductivity effect in doping modulated amorphous silicon is compared to the light-induced conductivity changes in compensated amorphous silicon. The recent proposal that the defect structure of doped amorphous silicon is in metastable thermal equilibrium is able to account for the metastable excess conductivity in both systems, and for the several orders of magnitude difference in exposure times needed.

UR - https://www.scopus.com/pages/publications/85088286435

UR - https://www.scopus.com/pages/publications/85088286435#tab=citedBy

U2 - 10.1007/978-1-4613-1841-5_57

DO - 10.1007/978-1-4613-1841-5_57

M3 - Chapter

AN - SCOPUS:85088286435

SN - 0306424940

SN - 9780306424946

BT - Disord Semicond

PB - Plenum Press

ER -

THERMAL EQUILIBRATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN DOPING MODULATED AMORPHOUS SILICON.

Abstract

Publisher link

Find It

Other files and links

Fingerprint

Cite this