Abstract
The structure of doped amorphous silicon is shown to be in metastable thermal equilibrium above 130°C, having temperature-dependent densities of dangling bonds and donors. The time to reach equilibrium is thermally activated, so that cooling establishes a slowly relaxing nonequilibrium state resembling a glass. The results are interpreted in terms of the recent defect-compensation model of doping.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 3030-3033 |
| Number of pages | 4 |
| Journal | Physical Review B |
| Volume | 34 |
| Issue number | 4 |
| DOIs | |
| State | Published - Jan 1 1986 |