Thermal equilibration in doped amorphous silicon

R. A. Street, J. Kakalios, T. M. Hayes

Research output: Contribution to journalArticlepeer-review

113 Scopus citations


The structure of doped amorphous silicon is shown to be in metastable thermal equilibrium above 130°C, having temperature-dependent densities of dangling bonds and donors. The time to reach equilibrium is thermally activated, so that cooling establishes a slowly relaxing nonequilibrium state resembling a glass. The results are interpreted in terms of the recent defect-compensation model of doping.

Original languageEnglish (US)
Pages (from-to)3030-3033
Number of pages4
JournalPhysical Review B
Issue number4
StatePublished - Jan 1 1986


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