Thermal dependence of the refractive index of GaAs and AlAs measured using semiconductor multilayer optical cavities

J. Talghader; J. S. Smith

doi:10.1063/1.114204

Thermal dependence of the refractive index of GaAs and AlAs measured using semiconductor multilayer optical cavities

J. Talghader
, J. S. Smith

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

95 Scopus citations

Abstract

The longitudinal optical mode shift with temperature was measured in two vertical cavity surface-emitting laser (VCSEL) type optical resonators with different GaAs and AlAs layer structures. The measurements show distinct differences in the behavior of the cavities. From the data the thermal dependencies of the indices of refraction of GaAs and AlAs for wavelengths near 1 μm were determined to be (2.67±0.07)×10^-4/°C and (1.43±0.07)×10^-4/°C, respectively.

Original language	English (US)
Pages (from-to)	335
Number of pages	1
Journal	Applied Physics Letters
DOIs	https://doi.org/10.1063/1.114204
State	Published - 1995

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title = "Thermal dependence of the refractive index of GaAs and AlAs measured using semiconductor multilayer optical cavities",

abstract = "The longitudinal optical mode shift with temperature was measured in two vertical cavity surface-emitting laser (VCSEL) type optical resonators with different GaAs and AlAs layer structures. The measurements show distinct differences in the behavior of the cavities. From the data the thermal dependencies of the indices of refraction of GaAs and AlAs for wavelengths near 1 μm were determined to be (2.67±0.07){\texttimes}10-4/°C and (1.43±0.07){\texttimes}10-4/°C, respectively.",

author = "J. Talghader and Smith, \{J. S.\}",

year = "1995",

doi = "10.1063/1.114204",

language = "English (US)",

pages = "335",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Thermal dependence of the refractive index of GaAs and AlAs measured using semiconductor multilayer optical cavities

AU - Talghader, J.

AU - Smith, J. S.

PY - 1995

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N2 - The longitudinal optical mode shift with temperature was measured in two vertical cavity surface-emitting laser (VCSEL) type optical resonators with different GaAs and AlAs layer structures. The measurements show distinct differences in the behavior of the cavities. From the data the thermal dependencies of the indices of refraction of GaAs and AlAs for wavelengths near 1 μm were determined to be (2.67±0.07)×10-4/°C and (1.43±0.07)×10-4/°C, respectively.

AB - The longitudinal optical mode shift with temperature was measured in two vertical cavity surface-emitting laser (VCSEL) type optical resonators with different GaAs and AlAs layer structures. The measurements show distinct differences in the behavior of the cavities. From the data the thermal dependencies of the indices of refraction of GaAs and AlAs for wavelengths near 1 μm were determined to be (2.67±0.07)×10-4/°C and (1.43±0.07)×10-4/°C, respectively.

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SN - 0003-6951

SP - 335

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Thermal dependence of the refractive index of GaAs and AlAs measured using semiconductor multilayer optical cavities

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