Thermal dependence of the refractive index of GaAs and AlAs measured using semiconductor multilayer optical cavities

J. Talghader; J. S. Smith

doi:10.1063/1.114204

Thermal dependence of the refractive index of GaAs and AlAs measured using semiconductor multilayer optical cavities

J. Talghader, J. S. Smith

Electrical and Computer Engineering

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Abstract

The longitudinal optical mode shift with temperature was measured in two vertical cavity surface-emitting laser (VCSEL) type optical resonators with different GaAs and AlAs layer structures. The measurements show distinct differences in the behavior of the cavities. From the data the thermal dependencies of the indices of refraction of GaAs and AlAs for wavelengths near 1 μm were determined to be (2.67±0.07)×10^-4/°C and (1.43±0.07)×10^-4/°C, respectively.

Original language	English (US)
Pages (from-to)	335
Number of pages	1
Journal	Applied Physics Letters
DOIs	https://doi.org/10.1063/1.114204
State	Published - 1995

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title = "Thermal dependence of the refractive index of GaAs and AlAs measured using semiconductor multilayer optical cavities",

abstract = "The longitudinal optical mode shift with temperature was measured in two vertical cavity surface-emitting laser (VCSEL) type optical resonators with different GaAs and AlAs layer structures. The measurements show distinct differences in the behavior of the cavities. From the data the thermal dependencies of the indices of refraction of GaAs and AlAs for wavelengths near 1 μm were determined to be (2.67±0.07)×10-4/°C and (1.43±0.07)×10-4/°C, respectively.",

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year = "1995",

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AU - Talghader, J.

AU - Smith, J. S.

PY - 1995

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N2 - The longitudinal optical mode shift with temperature was measured in two vertical cavity surface-emitting laser (VCSEL) type optical resonators with different GaAs and AlAs layer structures. The measurements show distinct differences in the behavior of the cavities. From the data the thermal dependencies of the indices of refraction of GaAs and AlAs for wavelengths near 1 μm were determined to be (2.67±0.07)×10-4/°C and (1.43±0.07)×10-4/°C, respectively.

AB - The longitudinal optical mode shift with temperature was measured in two vertical cavity surface-emitting laser (VCSEL) type optical resonators with different GaAs and AlAs layer structures. The measurements show distinct differences in the behavior of the cavities. From the data the thermal dependencies of the indices of refraction of GaAs and AlAs for wavelengths near 1 μm were determined to be (2.67±0.07)×10-4/°C and (1.43±0.07)×10-4/°C, respectively.

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Thermal dependence of the refractive index of GaAs and AlAs measured using semiconductor multilayer optical cavities

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