Thermal decomposition of dimethylaluminum isopropoxide on Si(1 0 0)

Sung Yong Lee, Bing Luo, Yangming Sun, J. M. White, Yunsoo Kim

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

The thermal decomposition of dimethylaluminum isopropoxide dimer, [(CH 3 ) 2 Al(O i C 3 H 7 )] 2 , on Si(1 0 0) is investigated by line-of-sight temperature programmed desorption (LOS-TPD), line-of-sight isothermal reaction spectroscopy (LOS-IRS), and Auger electron spectroscopy (AES). [(CH 3 ) 2 Al(O i C 3 H 7 )] 2 does not decompose upon adsorption on Si(1 0 0) held at 100 K or during subsequent LOS-TPD. AES indicates that film growth starts when the precursor is dosed with the substrate at ∼650 K. LOS-IRS shows that the monomer, [(CH 3 ) 2 Al(O i C 3 H 7 )] 2 , is an intermediate in the process of the dimer decomposition to aluminum-containing films, and that further decompositions occur via breaking the C-Al and O-C bonds.

Original languageEnglish (US)
Pages (from-to)234-242
Number of pages9
JournalApplied Surface Science
Volume222
Issue number1-4
DOIs
StatePublished - Jan 30 2004

Bibliographical note

Funding Information:
This work was supported by the Center for Materials Chemistry of the University of Texas at Austin, by the Robert A. Welch Foundation, and by Ministry of Science and Technology of Korea through the National Research Laboratory (NRL) Program.

Keywords

  • Aluminum oxide
  • Dimethylaluminum isopropoxide
  • Isothermal reactions
  • Si(1 0 0) substrate
  • TPD

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