Thermal-capillary analysis of Czochralski and liquid encapsulated Czochralski crystal growth. II. Processing strategies

J. J. Derby, R. A. Brown

Research output: Contribution to journalArticle

58 Scopus citations

Abstract

The pseudo-steady-state heat transfer model developed in a previous paper (J. Crystal Growth 74 (1986) 605) is augmented with constraints for constant crystal radius and melt/solid interface deflection. Combinations of growth rate, and crucible and bottom-heater temperatures are tested as processing parameters for satisfying the constrained thermal-capillary problem over a range of melt volumes corresponding to the sequence occuring during the batchwise Czochralski growth of a small-diameter silicon crystal. The applicability of each processing strategy is judged by the range of existence of the solution, in terms of melt volume and the values of the axial and radial temperature gradients in the crystal.

Original languageEnglish (US)
Pages (from-to)227-240
Number of pages14
JournalJournal of Crystal Growth
Volume75
Issue number2
DOIs
StatePublished - May 2 1986

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