THEORY OF THE HALL EFFECT IN RANDOMLY INHOMOGENEOUS SEMICONDUCTORS.

V. G. Karpov, A. Ya Shik, B. I. Shklovskii

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

A qualitative analysis is made of the characteristics of the Hall effect in semiconductors with random largescale variations of the potential. The analysis is based on the percolation theory. Nodes making an exponentially large contribution to the total Hall emf of a sample are identified among the nodes of an infinite cluster governing the conductivity of the sample. The carrier density at such nodes is equal to the density at the percolation level. Consequently, the effective Hall coefficient is characterized by the same activation energy as the conductivity and the effective Hall mobility is not an activation-type but a power-law function of temperature. It is pointed out that size effects can occur because the distance between the nodes important for the Hall effect may exceed the dimensions of a sample; in this case the effective Hall mobility is described by an exponential function with an activation energy.

Original languageEnglish (US)
Pages (from-to)901-903
Number of pages3
JournalSoviet physics. Semiconductors
Volume16
Issue number8
StatePublished - Jan 1 1982

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