Abstract
A model to describe electrical spin injection from a ferromagnetic contact into a conjugate organic semiconductor was presented. The model supports the picture that spin-selective tunnelling was critical for the spin polarization injection of charge carrier from a ferromagnetic metal into a semiconductor. It was found that spin density shows strong variation and reversal in sign near the extracting contact. It was also observed that the voltage drop developed across the device for a charge current was different for the case of parallel and antiparallel of the contacts.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 4898-4904 |
| Number of pages | 7 |
| Journal | Journal of Applied Physics |
| Volume | 95 |
| Issue number | 9 |
| DOIs | |
| State | Published - May 1 2004 |
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