Theory of nonradiative recombination in amorphous semiconductors

S. D. Baranovskii; V. G. Karpov; B. I. Shklovskii

doi:10.1016/0022-3093(87)90114-1

Theory of nonradiative recombination in amorphous semiconductors

S. D. Baranovskii
, V. G. Karpov
, B. I. Shklovskii

Physics and Astronomy (Twin Cities)

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Theory is developed for nonradiative recombination in a system with a continuous spectrum of localized states in the mobility gap, e.g. in non-crystalline semiconductor. The recombination flux is calculated and its dependeces on carrier concentration, temperature and other parameters are studied.

Original language	English (US)
Pages (from-to)	487-490
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	97-98
Issue number	PART 1
DOIs	https://doi.org/10.1016/0022-3093(87)90114-1
State	Published - Dec 2 1987

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title = "Theory of nonradiative recombination in amorphous semiconductors",

abstract = "Theory is developed for nonradiative recombination in a system with a continuous spectrum of localized states in the mobility gap, e.g. in non-crystalline semiconductor. The recombination flux is calculated and its dependeces on carrier concentration, temperature and other parameters are studied.",

author = "Baranovskii, \{S. D.\} and Karpov, \{V. G.\} and Shklovskii, \{B. I.\}",

year = "1987",

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doi = "10.1016/0022-3093(87)90114-1",

language = "English (US)",

volume = "97-98",

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T1 - Theory of nonradiative recombination in amorphous semiconductors

AU - Baranovskii, S. D.

AU - Karpov, V. G.

AU - Shklovskii, B. I.

PY - 1987/12/2

Y1 - 1987/12/2

N2 - Theory is developed for nonradiative recombination in a system with a continuous spectrum of localized states in the mobility gap, e.g. in non-crystalline semiconductor. The recombination flux is calculated and its dependeces on carrier concentration, temperature and other parameters are studied.

AB - Theory is developed for nonradiative recombination in a system with a continuous spectrum of localized states in the mobility gap, e.g. in non-crystalline semiconductor. The recombination flux is calculated and its dependeces on carrier concentration, temperature and other parameters are studied.

UR - https://www.scopus.com/pages/publications/45949117794

UR - https://www.scopus.com/pages/publications/45949117794#tab=citedBy

U2 - 10.1016/0022-3093(87)90114-1

DO - 10.1016/0022-3093(87)90114-1

M3 - Article

AN - SCOPUS:45949117794

SN - 0022-3093

VL - 97-98

SP - 487

EP - 490

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - PART 1

ER -

Theory of nonradiative recombination in amorphous semiconductors

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