Abstract
Strong 1 f noise for hopping conduction in lightly doped semiconductors is shown to be due to fluctuations of the number of electrons belonging to the infinite cluster of donors responsible for conductivity. These fluctuations are caused by slow exchange of electrons between the infinite cluster and small isolated donor clusters. A lower bound to the frequency range over which the spectral density of noise increases with decreasing frequency is found. Application of the theory to other strongly inhomogenous systems with percolation-type conduction is proposed.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 273-276 |
| Number of pages | 4 |
| Journal | Solid State Communications |
| Volume | 33 |
| Issue number | 3 |
| DOIs | |
| State | Published - Jan 1980 |