Theory of 1 f noise for hopping conduction

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Abstract

Strong 1 f noise for hopping conduction in lightly doped semiconductors is shown to be due to fluctuations of the number of electrons belonging to the infinite cluster of donors responsible for conductivity. These fluctuations are caused by slow exchange of electrons between the infinite cluster and small isolated donor clusters. A lower bound to the frequency range over which the spectral density of noise increases with decreasing frequency is found. Application of the theory to other strongly inhomogenous systems with percolation-type conduction is proposed.

Original languageEnglish (US)
Pages (from-to)273-276
Number of pages4
JournalSolid State Communications
Volume33
Issue number3
DOIs
StatePublished - Jan 1980

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