Theoretical transport studies of p-type GaN/AlGaN modulation-doped heterostructures

L. Hsu, W. Walukiewicz

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Hole transfer and low-temperature mobilities in p-type GaN/AlGaN modulation-doped heterostructures are calculated. It is shown that the strain polarization field in the pseudomorphic AlGaN barrier can be used to significantly enhance hole transfer from the barrier to the well. A two-dimensional hole gas is formed with densities greater than 1012 cm-2 and low-temperature mobilities in excess of 104 cm2/V s.

Original languageEnglish (US)
Pages (from-to)2405-2407
Number of pages3
JournalApplied Physics Letters
Issue number17
StatePublished - Apr 26 1999

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