Abstract
The purpose of this paper is to present a review of the basic issues implicit in the design of confined state photodetectors. The basic device structure consists of repeated unit cells each comprised of a narrow gap semiconductor layer sandwiched between barrier layers of wider band gap material. Gain in these structures is derived through carrier multiplication via impact excitation of confined electrons out of the narrow gap semiconductor layer. Different device designs are considered in an attempt to maximize the device gain at minimum dark current. In some implementations, the barrier layers are chosen to be graded such that the leading edge discontinuity is at least twice that at the trailing edge of the well forming an asymmetric well design. It is found that an asymmetric well design offers a much higher impact excitation of electrons confined within the well at lower operating voltage than a symmetric well design however at the expense of increased dark current. Quantum versus classical confinement of the electrons within the well is also investigated.
Original language | English (US) |
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Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
Publisher | Publ by Society of Photo-Optical Instrumentation Engineers |
Pages | 144-159 |
Number of pages | 16 |
ISBN (Print) | 0819412716, 9780819412713 |
DOIs | |
State | Published - 1993 |
Publication series
Name | Proceedings of SPIE - The International Society for Optical Engineering |
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Volume | 2022 |
ISSN (Print) | 0277-786X |
Bibliographical note
Funding Information:This work is based upon work supported by the National Science Foundation under Grant No. DCI-8607831.