Theoretical study of direct-current and radio-frequency breakdown in GaN wurtzite- and zinc-blende-phase MESFETs (metal-semiconductor field-effect transistors)

Maziar Farahmand, Michael Weber, Louis Tirino, Kevin F. Brennan, P P Ruden

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

In this paper, we present a comparison of the direct-current (DC) and radio-frequency (RF) breakdown behaviours of representative wurtzite- and zinc-blende-phase GaN MESFET structures based on a theoretical analysis. The calculations are made using a full-band ensemble Monte Carlo simulation that includes a numerical formulation of the impact ionization transition rate. Calculations of both the DC and RF breakdown voltages are presented for submicron MESFET devices made from either wurtzite- or zinc-blende-phase GaN. The devices are otherwise identical. It is found that the DC breakdown voltage in the wurtzite-phase GaN MESFET is significantly larger than that in the zinc-blende-phase device. This is due to the fact that electron heating occurs more rapidly within the zinc-blende phase than the wurtzite phase of GaN. As a consequence, avalanche breakdown occurs at higher applied field strengths and voltages in the wurtzite phase than in the zinc-blende phase of GaN. It is further found that the RF breakdown voltage of the devices increases with increasing frequency of the applied large-signal RF excitation.

Original languageEnglish (US)
Pages (from-to)10477-10486
Number of pages10
JournalJournal of Physics Condensed Matter
Volume13
Issue number46
DOIs
StatePublished - Nov 19 2001

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MESFET devices
wurtzite
Zinc
radio frequencies
field effect transistors
zinc
breakdown
direct current
Electric breakdown
electrical faults
metals
Impact ionization
avalanches
field strength
formulations
Heating
ionization
heating
Electrons
Electric potential

Cite this

Theoretical study of direct-current and radio-frequency breakdown in GaN wurtzite- and zinc-blende-phase MESFETs (metal-semiconductor field-effect transistors). / Farahmand, Maziar; Weber, Michael; Tirino, Louis; Brennan, Kevin F.; Ruden, P P.

In: Journal of Physics Condensed Matter, Vol. 13, No. 46, 19.11.2001, p. 10477-10486.

Research output: Contribution to journalArticle

Farahmand, Maziar ; Weber, Michael ; Tirino, Louis ; Brennan, Kevin F. ; Ruden, P P. / Theoretical study of direct-current and radio-frequency breakdown in GaN wurtzite- and zinc-blende-phase MESFETs (metal-semiconductor field-effect transistors). In: Journal of Physics Condensed Matter. 2001 ; Vol. 13, No. 46. pp. 10477-10486.
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