Abstract
In this paper, we present a comparison of the direct-current (DC) and radio-frequency (RF) breakdown behaviours of representative wurtzite- and zinc-blende-phase GaN MESFET structures based on a theoretical analysis. The calculations are made using a full-band ensemble Monte Carlo simulation that includes a numerical formulation of the impact ionization transition rate. Calculations of both the DC and RF breakdown voltages are presented for submicron MESFET devices made from either wurtzite- or zinc-blende-phase GaN. The devices are otherwise identical. It is found that the DC breakdown voltage in the wurtzite-phase GaN MESFET is significantly larger than that in the zinc-blende-phase device. This is due to the fact that electron heating occurs more rapidly within the zinc-blende phase than the wurtzite phase of GaN. As a consequence, avalanche breakdown occurs at higher applied field strengths and voltages in the wurtzite phase than in the zinc-blende phase of GaN. It is further found that the RF breakdown voltage of the devices increases with increasing frequency of the applied large-signal RF excitation.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 10477-10486 |
| Number of pages | 10 |
| Journal | Journal of Physics Condensed Matter |
| Volume | 13 |
| Issue number | 46 |
| DOIs | |
| State | Published - Nov 19 2001 |
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Theoretical study of direct-current and radio-frequency breakdown in GaN wurtzite- and zinc-blende-phase MESFETs (metal-semiconductor field-effect transistors). / Farahmand, Maziar; Weber, Michael; Tirino, Louis; Brennan, Kevin F.; Ruden, P P.
In: Journal of Physics Condensed Matter, Vol. 13, No. 46, 19.11.2001, p. 10477-10486.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Theoretical study of direct-current and radio-frequency breakdown in GaN wurtzite- and zinc-blende-phase MESFETs (metal-semiconductor field-effect transistors)
AU - Farahmand, Maziar
AU - Weber, Michael
AU - Tirino, Louis
AU - Brennan, Kevin F.
AU - Ruden, P P
PY - 2001/11/19
Y1 - 2001/11/19
N2 - In this paper, we present a comparison of the direct-current (DC) and radio-frequency (RF) breakdown behaviours of representative wurtzite- and zinc-blende-phase GaN MESFET structures based on a theoretical analysis. The calculations are made using a full-band ensemble Monte Carlo simulation that includes a numerical formulation of the impact ionization transition rate. Calculations of both the DC and RF breakdown voltages are presented for submicron MESFET devices made from either wurtzite- or zinc-blende-phase GaN. The devices are otherwise identical. It is found that the DC breakdown voltage in the wurtzite-phase GaN MESFET is significantly larger than that in the zinc-blende-phase device. This is due to the fact that electron heating occurs more rapidly within the zinc-blende phase than the wurtzite phase of GaN. As a consequence, avalanche breakdown occurs at higher applied field strengths and voltages in the wurtzite phase than in the zinc-blende phase of GaN. It is further found that the RF breakdown voltage of the devices increases with increasing frequency of the applied large-signal RF excitation.
AB - In this paper, we present a comparison of the direct-current (DC) and radio-frequency (RF) breakdown behaviours of representative wurtzite- and zinc-blende-phase GaN MESFET structures based on a theoretical analysis. The calculations are made using a full-band ensemble Monte Carlo simulation that includes a numerical formulation of the impact ionization transition rate. Calculations of both the DC and RF breakdown voltages are presented for submicron MESFET devices made from either wurtzite- or zinc-blende-phase GaN. The devices are otherwise identical. It is found that the DC breakdown voltage in the wurtzite-phase GaN MESFET is significantly larger than that in the zinc-blende-phase device. This is due to the fact that electron heating occurs more rapidly within the zinc-blende phase than the wurtzite phase of GaN. As a consequence, avalanche breakdown occurs at higher applied field strengths and voltages in the wurtzite phase than in the zinc-blende phase of GaN. It is further found that the RF breakdown voltage of the devices increases with increasing frequency of the applied large-signal RF excitation.
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U2 - 10.1088/0953-8984/13/46/316
DO - 10.1088/0953-8984/13/46/316
M3 - Article
VL - 13
SP - 10477
EP - 10486
JO - Journal of physics. Condensed matter : an Institute of Physics journal
JF - Journal of physics. Condensed matter : an Institute of Physics journal
SN - 0953-8984
IS - 46
ER -