Theoretical simulation of Hybrid II-O/III-N green light-emitting diode with MgZnO/InGaN/MgZnO heterojunction

Shruti Verma; Sushil K. Pandey; Saurabh K. Pandey; Shaibal Mukherjee

doi:10.1016/j.mssp.2014.12.016

Theoretical simulation of Hybrid II-O/III-N green light-emitting diode with MgZnO/InGaN/MgZnO heterojunction

Shruti Verma, Sushil K. Pandey, Saurabh K. Pandey, Shaibal Mukherjee

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We propose a hybrid light-emitting diode (LED) design comprising of p-MgZnO/InGaN/n-MgZnO sandwiched structure and emanating green electroluminescence centered at 560 nm. Different design strategies for optimizing the internal quantum efficiency (IQE) through 2-D numerical simulation have been proposed. Moreover, the feasibility of device realization is also reviewed. Detailed study of the effects of alloy composition, dopant concentration, and thickness of the electron blocking layer (EBL) and hole blocking layer (HBL) on the IQE is carried out. The optimization in selecting materials for EBL, HBL, and active layer is addressed while maximizing device IQE and reducing the efficiency droop. The impact of Auger non-radiative recombination on luminous power and quantum efficiency is discussed. The mechanisms behind efficiency droop, namely Auger recombination and electron leakage are elaborated. It is found that the hybrid LED shows the highest IQE of 93% with minimum efficiency droop as compared to ZnO based and GaN based LEDs for similar design parameters.

Original language	English (US)
Pages (from-to)	340-350
Number of pages	11
Journal	Materials Science in Semiconductor Processing
Volume	31
DOIs	https://doi.org/10.1016/j.mssp.2014.12.016
State	Published - Mar 2015
Externally published	Yes

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©2014 Elsevier Ltd. All rights reserved.

Keywords

Auger recombination
Efficiency droop
InGaN
Internal quantum efficiency
ZnO

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10.1016/j.mssp.2014.12.016

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title = "Theoretical simulation of Hybrid II-O/III-N green light-emitting diode with MgZnO/InGaN/MgZnO heterojunction",

abstract = "We propose a hybrid light-emitting diode (LED) design comprising of p-MgZnO/InGaN/n-MgZnO sandwiched structure and emanating green electroluminescence centered at 560 nm. Different design strategies for optimizing the internal quantum efficiency (IQE) through 2-D numerical simulation have been proposed. Moreover, the feasibility of device realization is also reviewed. Detailed study of the effects of alloy composition, dopant concentration, and thickness of the electron blocking layer (EBL) and hole blocking layer (HBL) on the IQE is carried out. The optimization in selecting materials for EBL, HBL, and active layer is addressed while maximizing device IQE and reducing the efficiency droop. The impact of Auger non-radiative recombination on luminous power and quantum efficiency is discussed. The mechanisms behind efficiency droop, namely Auger recombination and electron leakage are elaborated. It is found that the hybrid LED shows the highest IQE of 93% with minimum efficiency droop as compared to ZnO based and GaN based LEDs for similar design parameters.",

keywords = "Auger recombination, Efficiency droop, InGaN, Internal quantum efficiency, ZnO",

author = "Shruti Verma and Pandey, {Sushil K.} and Pandey, {Saurabh K.} and Shaibal Mukherjee",

year = "2015",

month = mar,

doi = "10.1016/j.mssp.2014.12.016",

language = "English (US)",

volume = "31",

pages = "340--350",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

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T1 - Theoretical simulation of Hybrid II-O/III-N green light-emitting diode with MgZnO/InGaN/MgZnO heterojunction

AU - Verma, Shruti

AU - Pandey, Sushil K.

AU - Pandey, Saurabh K.

AU - Mukherjee, Shaibal

PY - 2015/3

Y1 - 2015/3

N2 - We propose a hybrid light-emitting diode (LED) design comprising of p-MgZnO/InGaN/n-MgZnO sandwiched structure and emanating green electroluminescence centered at 560 nm. Different design strategies for optimizing the internal quantum efficiency (IQE) through 2-D numerical simulation have been proposed. Moreover, the feasibility of device realization is also reviewed. Detailed study of the effects of alloy composition, dopant concentration, and thickness of the electron blocking layer (EBL) and hole blocking layer (HBL) on the IQE is carried out. The optimization in selecting materials for EBL, HBL, and active layer is addressed while maximizing device IQE and reducing the efficiency droop. The impact of Auger non-radiative recombination on luminous power and quantum efficiency is discussed. The mechanisms behind efficiency droop, namely Auger recombination and electron leakage are elaborated. It is found that the hybrid LED shows the highest IQE of 93% with minimum efficiency droop as compared to ZnO based and GaN based LEDs for similar design parameters.

AB - We propose a hybrid light-emitting diode (LED) design comprising of p-MgZnO/InGaN/n-MgZnO sandwiched structure and emanating green electroluminescence centered at 560 nm. Different design strategies for optimizing the internal quantum efficiency (IQE) through 2-D numerical simulation have been proposed. Moreover, the feasibility of device realization is also reviewed. Detailed study of the effects of alloy composition, dopant concentration, and thickness of the electron blocking layer (EBL) and hole blocking layer (HBL) on the IQE is carried out. The optimization in selecting materials for EBL, HBL, and active layer is addressed while maximizing device IQE and reducing the efficiency droop. The impact of Auger non-radiative recombination on luminous power and quantum efficiency is discussed. The mechanisms behind efficiency droop, namely Auger recombination and electron leakage are elaborated. It is found that the hybrid LED shows the highest IQE of 93% with minimum efficiency droop as compared to ZnO based and GaN based LEDs for similar design parameters.

KW - Auger recombination

KW - Efficiency droop

KW - InGaN

KW - Internal quantum efficiency

KW - ZnO

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DO - 10.1016/j.mssp.2014.12.016

M3 - Article

AN - SCOPUS:84919897844

SN - 1369-8001

VL - 31

SP - 340

EP - 350

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

ER -

Theoretical simulation of Hybrid II-O/III-N green light-emitting diode with MgZnO/InGaN/MgZnO heterojunction

Abstract

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