Theoretical calculations of structures and properties of one-dimensional silicon-based nanomaterials: Particularities and peculiarities of silicon and silicon-containing nanowires and nanotubes

Boon K. Teo, Shu Ping Huang, R. Q. Zhang, Wai Kee Li

Research output: Contribution to journalReview articlepeer-review

31 Scopus citations

Abstract

Among various nanomaterials, one-dimensional silicon-based nanomaterials occupy a very important place because of their unique mechanical, thermal, optical, electrical, and optoelectronic properties, and potential technological applications. Herein, we review the recent theoretical calculations of the structures and properties of silicon-based nanowires and nanotubes, with special emphasis on the particularities and peculiarities of silicon and silicon-containing nanowires and nanotubes. These calculations allow not only rationalization of the observed experimental results, but also predictions of the yet-unknown nanostructures and their unusual properties.

Original languageEnglish (US)
Pages (from-to)2935-2958
Number of pages24
JournalCoordination Chemistry Reviews
Volume253
Issue number23-24
DOIs
StatePublished - Dec 2009

Bibliographical note

Copyright:
Copyright 2009 Elsevier B.V., All rights reserved.

Keywords

  • Silicon carbide nanostructures
  • Silicon nanowires and nanotubes
  • Silicon-based nanomaterials
  • Structures and properties
  • Theoretical calculations

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