In this work, experimental data is presented on the heterostructure hot electron diode (H2ED), a two-terminal device that exhibits S-shaped negative differential resistance due to a field dependent transition between the current conduction modes of tunneling and thermionic emission of hot electrons in a two-layer AlGaAs heterostructure. Results are presented on various single and multiple period H2ED structures fabricated from wafers grown by metalorganic chemical vapor deposition (MOCVD). Preliminary microwave characterization of the H2ED on non-optimized structures have resulted in test-fixture-limited oscillation at frequencies greater than 17GHz.
- hot electron
- thermionic emission