Theoretical and experimental analysis of the switching mechanism in heterostructure hot-electron diodes

T. K. Higman, J. M. Higman, M. A. Emanuel, K. Hess, J. J. Coleman

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

We report a theoretical analysis of the switching mechanism in the heterostructure hot-electron diode which confirms our earlier qualitative description. In addition, we present new experimental data on improved multilayer structures grown by metalorganic chemical vapor deposition which show the same negative differential resistance as reported previously. We show that these experimental data are in overall agreement with the theoretical results.

Original languageEnglish (US)
Pages (from-to)1495-1499
Number of pages5
JournalJournal of Applied Physics
Volume62
Issue number4
DOIs
StatePublished - Dec 1 1987

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