Theoretical and experimental analysis of the switching mechanism in heterostructure hot-electron diodes

T. K. Higman; J. M. Higman; M. A. Emanuel; K. Hess; J. J. Coleman

doi:10.1063/1.339630

Theoretical and experimental analysis of the switching mechanism in heterostructure hot-electron diodes

T. K. Higman, J. M. Higman, M. A. Emanuel, K. Hess, J. J. Coleman

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

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Abstract

We report a theoretical analysis of the switching mechanism in the heterostructure hot-electron diode which confirms our earlier qualitative description. In addition, we present new experimental data on improved multilayer structures grown by metalorganic chemical vapor deposition which show the same negative differential resistance as reported previously. We show that these experimental data are in overall agreement with the theoretical results.

Original language	English (US)
Pages (from-to)	1495-1499
Number of pages	5
Journal	Journal of Applied Physics
Volume	62
Issue number	4
DOIs	https://doi.org/10.1063/1.339630
State	Published - 1987

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10.1063/1.339630

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title = "Theoretical and experimental analysis of the switching mechanism in heterostructure hot-electron diodes",

abstract = "We report a theoretical analysis of the switching mechanism in the heterostructure hot-electron diode which confirms our earlier qualitative description. In addition, we present new experimental data on improved multilayer structures grown by metalorganic chemical vapor deposition which show the same negative differential resistance as reported previously. We show that these experimental data are in overall agreement with the theoretical results.",

author = "Higman, {T. K.} and Higman, {J. M.} and Emanuel, {M. A.} and K. Hess and Coleman, {J. J.}",

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AU - Higman, T. K.

AU - Higman, J. M.

AU - Emanuel, M. A.

AU - Hess, K.

AU - Coleman, J. J.

PY - 1987

Y1 - 1987

N2 - We report a theoretical analysis of the switching mechanism in the heterostructure hot-electron diode which confirms our earlier qualitative description. In addition, we present new experimental data on improved multilayer structures grown by metalorganic chemical vapor deposition which show the same negative differential resistance as reported previously. We show that these experimental data are in overall agreement with the theoretical results.

AB - We report a theoretical analysis of the switching mechanism in the heterostructure hot-electron diode which confirms our earlier qualitative description. In addition, we present new experimental data on improved multilayer structures grown by metalorganic chemical vapor deposition which show the same negative differential resistance as reported previously. We show that these experimental data are in overall agreement with the theoretical results.

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JO - Journal of Applied Physics

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Theoretical and experimental analysis of the switching mechanism in heterostructure hot-electron diodes

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