The synergistic influence of anionic bath immersion time on the photoelectrochemical performance of CZTS thin films prepared by a modified SILAR sequence

M. P. Suryawanshi; P. S. Patil; S. W. Shin; K. V. Gurav; G. L. Agawane; M. G. Gang; Jin Hyeok Kim; A. V. Moholkar

doi:10.1039/c4ra01208a

The synergistic influence of anionic bath immersion time on the photoelectrochemical performance of CZTS thin films prepared by a modified SILAR sequence

M. P. Suryawanshi
, P. S. Patil
, S. W. Shin
, K. V. Gurav
, G. L. Agawane
, M. G. Gang
, Jin Hyeok Kim
, A. V. Moholkar

Chemical Engineering and Materials Science

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

A novel approach of successive ionic adsorption and reaction (SILAR) with a modified sequence is developed to synthesize Cu₂ZnSnS₄ (CZTS) films with outstanding photovoltaic characteristics. The influence of different anionic bath immersion times on the properties of CZTS films is investigated. The best PEC of 2.33% with a maximum J_sc of 12.88 mA cm^-2, V_oc of 0.42 V and FF of 0.43 is obtained for the lower value of anionic bath immersion time.

Original language	English (US)
Pages (from-to)	18537-18540
Number of pages	4
Journal	RSC Advances
Volume	4
Issue number	36
DOIs	https://doi.org/10.1039/c4ra01208a
State	Published - 2014

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title = "The synergistic influence of anionic bath immersion time on the photoelectrochemical performance of CZTS thin films prepared by a modified SILAR sequence",

abstract = "A novel approach of successive ionic adsorption and reaction (SILAR) with a modified sequence is developed to synthesize Cu2ZnSnS4 (CZTS) films with outstanding photovoltaic characteristics. The influence of different anionic bath immersion times on the properties of CZTS films is investigated. The best PEC of 2.33\% with a maximum Jsc of 12.88 mA cm-2, Voc of 0.42 V and FF of 0.43 is obtained for the lower value of anionic bath immersion time.",

author = "Suryawanshi, \{M. P.\} and Patil, \{P. S.\} and Shin, \{S. W.\} and Gurav, \{K. V.\} and Agawane, \{G. L.\} and Gang, \{M. G.\} and Kim, \{Jin Hyeok\} and Moholkar, \{A. V.\}",

year = "2014",

doi = "10.1039/c4ra01208a",

language = "English (US)",

volume = "4",

pages = "18537--18540",

journal = "RSC Advances",

issn = "2046-2069",

publisher = "Royal Society of Chemistry",

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T1 - The synergistic influence of anionic bath immersion time on the photoelectrochemical performance of CZTS thin films prepared by a modified SILAR sequence

AU - Suryawanshi, M. P.

AU - Patil, P. S.

AU - Shin, S. W.

AU - Gurav, K. V.

AU - Agawane, G. L.

AU - Gang, M. G.

AU - Kim, Jin Hyeok

AU - Moholkar, A. V.

PY - 2014

Y1 - 2014

N2 - A novel approach of successive ionic adsorption and reaction (SILAR) with a modified sequence is developed to synthesize Cu2ZnSnS4 (CZTS) films with outstanding photovoltaic characteristics. The influence of different anionic bath immersion times on the properties of CZTS films is investigated. The best PEC of 2.33% with a maximum Jsc of 12.88 mA cm-2, Voc of 0.42 V and FF of 0.43 is obtained for the lower value of anionic bath immersion time.

AB - A novel approach of successive ionic adsorption and reaction (SILAR) with a modified sequence is developed to synthesize Cu2ZnSnS4 (CZTS) films with outstanding photovoltaic characteristics. The influence of different anionic bath immersion times on the properties of CZTS films is investigated. The best PEC of 2.33% with a maximum Jsc of 12.88 mA cm-2, Voc of 0.42 V and FF of 0.43 is obtained for the lower value of anionic bath immersion time.

UR - https://www.scopus.com/pages/publications/84899557571

UR - https://www.scopus.com/pages/publications/84899557571#tab=citedBy

U2 - 10.1039/c4ra01208a

DO - 10.1039/c4ra01208a

M3 - Article

AN - SCOPUS:84899557571

SN - 2046-2069

VL - 4

SP - 18537

EP - 18540

JO - RSC Advances

JF - RSC Advances

IS - 36

ER -

The synergistic influence of anionic bath immersion time on the photoelectrochemical performance of CZTS thin films prepared by a modified SILAR sequence

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